Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

Bo Yun Jang, Beom Jong Kim, Young Hun Jeong, Sahn Nahm, Ho Jung Sun, Hwack Ju Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

BaTi4O9 thin films were grown on a Pt/Ti/SiO 2/Si substrate using RF magnetron sputtering. A homogeneous BaTi 4O9 crystalline phase developed in the films deposited at 550°C and annealed above 850°C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi4O9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10-9 A/cm2 was achieved at ± 2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V2 and -92.157 ppm/°C, respectively, at 100 kHz.

Original languageEnglish
Pages (from-to)387-391
Number of pages5
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
Publication statusPublished - 2006 Dec 1

Fingerprint

MIM (semiconductors)
Dielectric properties
dielectric properties
capacitors
Capacitors
Capacitance
capacitance
Leakage currents
Thin films
leakage
Current density
thin films
current density
Magnetron sputtering
Film thickness
magnetron sputtering
Electric properties
Permittivity
film thickness
dissipation

Keywords

  • BaTiO
  • Capacitance density
  • Dissipation factor
  • Leakage current density
  • RF

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications. / Jang, Bo Yun; Kim, Beom Jong; Jeong, Young Hun; Nahm, Sahn; Sun, Ho Jung; Lee, Hwack Ju.

In: Journal of Electroceramics, Vol. 17, No. 2-4, 01.12.2006, p. 387-391.

Research output: Contribution to journalArticle

Jang, Bo Yun ; Kim, Beom Jong ; Jeong, Young Hun ; Nahm, Sahn ; Sun, Ho Jung ; Lee, Hwack Ju. / Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications. In: Journal of Electroceramics. 2006 ; Vol. 17, No. 2-4. pp. 387-391.
@article{14204eaa90304f1aaddd4d91058814b3,
title = "Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications",
abstract = "BaTi4O9 thin films were grown on a Pt/Ti/SiO 2/Si substrate using RF magnetron sputtering. A homogeneous BaTi 4O9 crystalline phase developed in the films deposited at 550°C and annealed above 850°C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi4O9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm2 and a dissipation factor of 0.26{\%} at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10-9 A/cm2 was achieved at ± 2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V2 and -92.157 ppm/°C, respectively, at 100 kHz.",
keywords = "BaTiO, Capacitance density, Dissipation factor, Leakage current density, RF",
author = "Jang, {Bo Yun} and Kim, {Beom Jong} and Jeong, {Young Hun} and Sahn Nahm and Sun, {Ho Jung} and Lee, {Hwack Ju}",
year = "2006",
month = "12",
day = "1",
doi = "10.1007/s10832-006-9637-2",
language = "English",
volume = "17",
pages = "387--391",
journal = "Journal of Electroceramics",
issn = "1385-3449",
publisher = "Springer Netherlands",
number = "2-4",

}

TY - JOUR

T1 - Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

AU - Jang, Bo Yun

AU - Kim, Beom Jong

AU - Jeong, Young Hun

AU - Nahm, Sahn

AU - Sun, Ho Jung

AU - Lee, Hwack Ju

PY - 2006/12/1

Y1 - 2006/12/1

N2 - BaTi4O9 thin films were grown on a Pt/Ti/SiO 2/Si substrate using RF magnetron sputtering. A homogeneous BaTi 4O9 crystalline phase developed in the films deposited at 550°C and annealed above 850°C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi4O9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10-9 A/cm2 was achieved at ± 2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V2 and -92.157 ppm/°C, respectively, at 100 kHz.

AB - BaTi4O9 thin films were grown on a Pt/Ti/SiO 2/Si substrate using RF magnetron sputtering. A homogeneous BaTi 4O9 crystalline phase developed in the films deposited at 550°C and annealed above 850°C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi4O9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10-9 A/cm2 was achieved at ± 2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V2 and -92.157 ppm/°C, respectively, at 100 kHz.

KW - BaTiO

KW - Capacitance density

KW - Dissipation factor

KW - Leakage current density

KW - RF

UR - http://www.scopus.com/inward/record.url?scp=33847335115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847335115&partnerID=8YFLogxK

U2 - 10.1007/s10832-006-9637-2

DO - 10.1007/s10832-006-9637-2

M3 - Article

VL - 17

SP - 387

EP - 391

JO - Journal of Electroceramics

JF - Journal of Electroceramics

SN - 1385-3449

IS - 2-4

ER -