Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

Bo Yun Jang, Beom Jong Kim, Young Hun Jeong, Sahn Nahm, Ho Jung Sun, Hwack Ju Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

BaTi4O9 thin films were grown on a Pt/Ti/SiO 2/Si substrate using RF magnetron sputtering. A homogeneous BaTi 4O9 crystalline phase developed in the films deposited at 550°C and annealed above 850°C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi4O9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10-9 A/cm2 was achieved at ± 2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V2 and -92.157 ppm/°C, respectively, at 100 kHz.

Original languageEnglish
Pages (from-to)387-391
Number of pages5
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
Publication statusPublished - 2006 Dec

Keywords

  • BaTiO
  • Capacitance density
  • Dissipation factor
  • Leakage current density
  • RF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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