Structure and dielectric properties of cubic Bi2(Zn 1/3Ta2/3)2 O7 thin films

Jun Hong Noh, Hee Beom Hong, Jung Kun Lee, Chin Moo Cho, Jin Young Kim, Sangwook Lee, In Sun Cho, Hyun Suk Jung, Kug Sun Hong

Research output: Contribution to journalArticle

Abstract

Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.

Original languageEnglish
Article number084103
JournalJournal of Applied Physics
Volume106
Issue number8
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Noh, J. H., Hong, H. B., Lee, J. K., Cho, C. M., Kim, J. Y., Lee, S., Cho, I. S., Jung, H. S., & Hong, K. S. (2009). Structure and dielectric properties of cubic Bi2(Zn 1/3Ta2/3)2 O7 thin films. Journal of Applied Physics, 106(8), [084103]. https://doi.org/10.1063/1.3246807