Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

Tae Geun Kim, Kyoung Chan Kim, Dong Ho Kim, Suk Ho Yoon, Jeoung Wook Lee, Cheol Soo Sone, Yong Jo Park

Research output: Contribution to journalArticle

9 Citations (Scopus)


We propose a way of increasing overall efficiency of InGaN-GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for the electrons, making a low-energy electron injection possible. The effect of the AlGaN thin film is verified by the simulation regarding the carrier distributions. By using this idea, the overall efficiency of the UV LED is enhanced by 13.5% over that of the conventional UV LEDs.

Original languageEnglish
Pages (from-to)264-269
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4 SPEC. ISS.
Publication statusPublished - 2004 Dec 10



  • A1. Electron tunneling barrier
  • A3. Metalorganic chemical vapor deposition
  • B3. Ultraviolet (UV) light-emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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