Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

Tae Geun Kim; Kyoung Chan Kim; Dong Ho Kim; Suk Ho Yoon; Jeoung Wook Lee; Cheol Soo Sone; Yong Jo Park

doi:10.1016/j.jcrysgro.2004.08.100

Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

Tae Geun Kim, Kyoung Chan Kim, Dong Ho Kim, Suk Ho Yoon, Jeoung Wook Lee, Cheol Soo Sone, Yong Jo Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We propose a way of increasing overall efficiency of InGaN-GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for the electrons, making a low-energy electron injection possible. The effect of the AlGaN thin film is verified by the simulation regarding the carrier distributions. By using this idea, the overall efficiency of the UV LED is enhanced by 13.5% over that of the conventional UV LEDs.

Original language	English
Pages (from-to)	264-269
Number of pages	6
Journal	Journal of Crystal Growth
Volume	272
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.08.100
Publication status	Published - 2004 Dec 10

Keywords

A1. Electron tunneling barrier
A3. Metalorganic chemical vapor deposition
B3. Ultraviolet (UV) light-emitting diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.08.100

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title = "Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism",

abstract = "We propose a way of increasing overall efficiency of InGaN-GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for the electrons, making a low-energy electron injection possible. The effect of the AlGaN thin film is verified by the simulation regarding the carrier distributions. By using this idea, the overall efficiency of the UV LED is enhanced by 13.5% over that of the conventional UV LEDs.",

keywords = "A1. Electron tunneling barrier, A3. Metalorganic chemical vapor deposition, B3. Ultraviolet (UV) light-emitting diodes",

author = "Kim, {Tae Geun} and Kim, {Kyoung Chan} and Kim, {Dong Ho} and Yoon, {Suk Ho} and Lee, {Jeoung Wook} and Sone, {Cheol Soo} and Park, {Yong Jo}",

note = "Funding Information: This work was supported by a Korea University Grant.",

year = "2004",

month = dec,

day = "10",

doi = "10.1016/j.jcrysgro.2004.08.100",

language = "English",

volume = "272",

pages = "264--269",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4 SPEC. ISS.",

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TY - JOUR

T1 - Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

AU - Kim, Tae Geun

AU - Kim, Kyoung Chan

AU - Kim, Dong Ho

AU - Yoon, Suk Ho

AU - Lee, Jeoung Wook

AU - Sone, Cheol Soo

AU - Park, Yong Jo

N1 - Funding Information: This work was supported by a Korea University Grant.

PY - 2004/12/10

Y1 - 2004/12/10

N2 - We propose a way of increasing overall efficiency of InGaN-GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for the electrons, making a low-energy electron injection possible. The effect of the AlGaN thin film is verified by the simulation regarding the carrier distributions. By using this idea, the overall efficiency of the UV LED is enhanced by 13.5% over that of the conventional UV LEDs.

AB - We propose a way of increasing overall efficiency of InGaN-GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for the electrons, making a low-energy electron injection possible. The effect of the AlGaN thin film is verified by the simulation regarding the carrier distributions. By using this idea, the overall efficiency of the UV LED is enhanced by 13.5% over that of the conventional UV LEDs.

KW - A1. Electron tunneling barrier

KW - A3. Metalorganic chemical vapor deposition

KW - B3. Ultraviolet (UV) light-emitting diodes

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U2 - 10.1016/j.jcrysgro.2004.08.100

DO - 10.1016/j.jcrysgro.2004.08.100

M3 - Article

AN - SCOPUS:9944221903

SN - 0022-0248

VL - 272

SP - 264

EP - 269

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4 SPEC. ISS.

ER -

Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism

Abstract

Keywords

ASJC Scopus subject areas

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