Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

Jae-Sung Rieh, David Greenberg, Qizhi Liu, Alvin J. Joseph, Greg Freeman, David C. Ahlgren

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an Rth measurement method and a geometry-based fast analytic thermal model were first developed for trench-isolated SiGe HBTs. Based on the method and model, a set of device design points for lowered Rth without compromising the RF performance have been successfully proposed and experimentally verified on IBM's 200-GHz SiGe HBTs. The details of the proposed structures and acquired results will be described in detail in the paper. The results obtained in this study shed a light on the possibility of the simultaneous optimization of thermal and electrical performance of SiGe HBTs.

Original languageEnglish
Pages (from-to)2744-2752
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume52
Issue number12
DOIs
Publication statusPublished - 2005 Dec 1

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Heterojunction bipolar transistors
bipolar transistors
heterojunctions
optimization
high speed
Hot Temperature
Heating
heating
Geometry
augmentation
geometry
Temperature
temperature

Keywords

  • Electrothermal effects
  • Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances. / Rieh, Jae-Sung; Greenberg, David; Liu, Qizhi; Joseph, Alvin J.; Freeman, Greg; Ahlgren, David C.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 12, 01.12.2005, p. 2744-2752.

Research output: Contribution to journalArticle

Rieh, Jae-Sung ; Greenberg, David ; Liu, Qizhi ; Joseph, Alvin J. ; Freeman, Greg ; Ahlgren, David C. / Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances. In: IEEE Transactions on Electron Devices. 2005 ; Vol. 52, No. 12. pp. 2744-2752.
@article{64598f0ae6bf46da99825b7a4972598b,
title = "Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances",
abstract = "The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an Rth measurement method and a geometry-based fast analytic thermal model were first developed for trench-isolated SiGe HBTs. Based on the method and model, a set of device design points for lowered Rth without compromising the RF performance have been successfully proposed and experimentally verified on IBM's 200-GHz SiGe HBTs. The details of the proposed structures and acquired results will be described in detail in the paper. The results obtained in this study shed a light on the possibility of the simultaneous optimization of thermal and electrical performance of SiGe HBTs.",
keywords = "Electrothermal effects, Heterojunction bipolar transistors",
author = "Jae-Sung Rieh and David Greenberg and Qizhi Liu and Joseph, {Alvin J.} and Greg Freeman and Ahlgren, {David C.}",
year = "2005",
month = "12",
day = "1",
doi = "10.1109/TED.2005.859652",
language = "English",
volume = "52",
pages = "2744--2752",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

AU - Rieh, Jae-Sung

AU - Greenberg, David

AU - Liu, Qizhi

AU - Joseph, Alvin J.

AU - Freeman, Greg

AU - Ahlgren, David C.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an Rth measurement method and a geometry-based fast analytic thermal model were first developed for trench-isolated SiGe HBTs. Based on the method and model, a set of device design points for lowered Rth without compromising the RF performance have been successfully proposed and experimentally verified on IBM's 200-GHz SiGe HBTs. The details of the proposed structures and acquired results will be described in detail in the paper. The results obtained in this study shed a light on the possibility of the simultaneous optimization of thermal and electrical performance of SiGe HBTs.

AB - The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an Rth measurement method and a geometry-based fast analytic thermal model were first developed for trench-isolated SiGe HBTs. Based on the method and model, a set of device design points for lowered Rth without compromising the RF performance have been successfully proposed and experimentally verified on IBM's 200-GHz SiGe HBTs. The details of the proposed structures and acquired results will be described in detail in the paper. The results obtained in this study shed a light on the possibility of the simultaneous optimization of thermal and electrical performance of SiGe HBTs.

KW - Electrothermal effects

KW - Heterojunction bipolar transistors

UR - http://www.scopus.com/inward/record.url?scp=29244487927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29244487927&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.859652

DO - 10.1109/TED.2005.859652

M3 - Article

VL - 52

SP - 2744

EP - 2752

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -