Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

Min Je Kim, A. Ra Jung, Myeongjae Lee, Dongjin Kim, Suhee Ro, Seon Mi Jin, Hieu Dinh Nguyen, Jeehye Yang, Kyung Koo Lee, Eunji Lee, Moon Sung Kang, Hyunjung Kim, Jong Ho Choi, Bongsoo Kim, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Original languageEnglish
Pages (from-to)40503-40515
Number of pages13
JournalACS Applied Materials and Interfaces
Issue number46
Publication statusPublished - 2017 Nov 22


  • carrier mobility
  • flexible field-effect transistors
  • mechanical stability
  • organic semiconductors
  • structure-property relationship

ASJC Scopus subject areas

  • Materials Science(all)


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