@article{05dc0a796f454b13913e3b5dfc5cba05,
title = "Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN",
abstract = "A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near Ec-0.56 eV in limiting the lifetime and diffusion length values in all these materials.",
author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Yakimov, {E. B.} and Tarelkin, {S. A.} and Turutin, {A. V.} and Shemerov, {I. V.} and Pearton, {S. J.}",
note = "Funding Information: The work at NUST MISiS was supported, in part, by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (K2-2014-055). The work at Chonbuk National University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT, and Future Planning (2015042417). The work at UF was supported by DTRA. Publisher Copyright: {\textcopyright} 2016 Author(s). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",
year = "2016",
month = may,
day = "28",
doi = "10.1063/1.4952734",
language = "English",
volume = "119",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "20",
}