Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, S. A. Tarelkin, A. V. Turutin, I. V. Shemerov, S. J. Pearton

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Abstract

A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near E c -0.56 eV in limiting the lifetime and diffusion length values in all these materials.

Original languageEnglish
Article number205109
JournalJournal of Applied Physics
Volume119
Issue number20
DOIs
Publication statusPublished - 2016 May 28
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Tarelkin, S. A., Turutin, A. V., Shemerov, I. V., & Pearton, S. J. (2016). Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN. Journal of Applied Physics, 119(20), [205109]. https://doi.org/10.1063/1.4952734