Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method

P. Syed Abthagir, Young Geun Ha, Eun Ah You, Seon Hwa Jeong, Hoon Seok Seo, Jong-Ho Choi

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO 2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO 2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.

Original languageEnglish
Pages (from-to)23918-23924
Number of pages7
JournalJournal of Physical Chemistry B
Volume109
Issue number50
DOIs
Publication statusPublished - 2005 Dec 22

Fingerprint

Thin film transistors
transistors
Thin films
thin films
Surface morphology
Surface treatment
Drain current
Carrier mobility
surface treatment
Current voltage characteristics
Threshold voltage
Surface structure
Silicon Dioxide
Structural properties
Atomic force microscopy
Silica
Modulation
naphthacene
pentacene
Crystalline materials

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method. / Abthagir, P. Syed; Ha, Young Geun; You, Eun Ah; Jeong, Seon Hwa; Seo, Hoon Seok; Choi, Jong-Ho.

In: Journal of Physical Chemistry B, Vol. 109, No. 50, 22.12.2005, p. 23918-23924.

Research output: Contribution to journalArticle

Abthagir, P. Syed ; Ha, Young Geun ; You, Eun Ah ; Jeong, Seon Hwa ; Seo, Hoon Seok ; Choi, Jong-Ho. / Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method. In: Journal of Physical Chemistry B. 2005 ; Vol. 109, No. 50. pp. 23918-23924.
@article{3fb827f7a0c74374af95ceccf225f5bf,
title = "Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method",
abstract = "The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO 2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO 2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.",
author = "Abthagir, {P. Syed} and Ha, {Young Geun} and You, {Eun Ah} and Jeong, {Seon Hwa} and Seo, {Hoon Seok} and Jong-Ho Choi",
year = "2005",
month = "12",
day = "22",
doi = "10.1021/jp054894r",
language = "English",
volume = "109",
pages = "23918--23924",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "50",

}

TY - JOUR

T1 - Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method

AU - Abthagir, P. Syed

AU - Ha, Young Geun

AU - You, Eun Ah

AU - Jeong, Seon Hwa

AU - Seo, Hoon Seok

AU - Choi, Jong-Ho

PY - 2005/12/22

Y1 - 2005/12/22

N2 - The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO 2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO 2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.

AB - The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO 2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO 2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.

UR - http://www.scopus.com/inward/record.url?scp=30544444194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30544444194&partnerID=8YFLogxK

U2 - 10.1021/jp054894r

DO - 10.1021/jp054894r

M3 - Article

VL - 109

SP - 23918

EP - 23924

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 50

ER -