Study of a-plane GaN epitaxial lateral overgrowth using carbonized photoresist mask on r-plane sapphire

Samseok Jang, Dohan Lee, Jun Hyuck Kwon, Sang Il Kim, So Young Yim, Jaesang Lee, Ji Hun Park, Dongjin Byun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (1102) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 12 μm. The stripe-patterned PR was annealed at 1100 °C in a H 2 atmosphere. The stripes were aligned parallel to the h1100iGaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.

Original languageEnglish
Article number115501
JournalJapanese journal of applied physics
Volume51
Issue number11
DOIs
Publication statusPublished - 2012 Nov

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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