Study of chirped quantum dot superluminescent diodes

Il Ki Han, Hyung Cheol Bae, Woon Jo Cho, Jung I.I. Lee, Hong Lee Park, Tae Geun Kim, Joo In Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a three-stack InAs QD part with a band-gap energy of 0.95 eV and another three-stack InAs QD part with a band-gap energy of 1.03 eV. From the electroluminescence (EL) measurement of SLDs, it was observed that there were two peaks separated by 80 nm. Such separation of the two peaks was consistent with that shown in the photoluminescence curve obtained at room temperature, indicating that the chirped QD characteristics of the active layer are directly reflected on the EL spectra of SLDs. The 3 dB bandwidths of both peaks were measured a 30 nm and 37 nm.

Original languageEnglish
Pages (from-to)5692-5695
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 B
DOIs
Publication statusPublished - 2005 Jul 26

Keywords

  • Chirped quantum dot
  • Electroluminescence
  • Superluminescent diodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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