Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory

Yu Jeong Seo, Kyoung Chan Kim, Hee Dong Kim, Tae Geun Kim, Ho Myoung An

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The origin and the locations of the hole traps in the oxide-nitride-oxide (ONO) structure fabricated on a p-type Si substrate were investigated by using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. The C-V loop was used not only to evaluate the memory effect of the ONO capacitor but also to determine suitable bias conditions for DLTS. Then, hole traps were found to be distributed over energy levels of 0.49 ∼ 0.64 eV above the valence band maximum of Si and their origin was attributed to a combination of nitride and the SiO2/Si interface by using small-pulse DLTS and filling -bias- dependent DLTS techniques.

Original languageEnglish
Pages (from-to)3302-3306
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1

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nitrides
flash
traps
oxides
spectroscopy
capacitance
electric potential
capacitors
energy levels
valence
pulses

Keywords

  • Charge trap
  • Hole trap
  • ONO
  • SONOS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory. / Seo, Yu Jeong; Kim, Kyoung Chan; Kim, Hee Dong; Kim, Tae Geun; An, Ho Myoung.

In: Journal of the Korean Physical Society, Vol. 53, No. 6, 01.12.2008, p. 3302-3306.

Research output: Contribution to journalArticle

Seo, Yu Jeong ; Kim, Kyoung Chan ; Kim, Hee Dong ; Kim, Tae Geun ; An, Ho Myoung. / Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 6. pp. 3302-3306.
@article{d6f8bb7b95724e9b996f498e72daa246,
title = "Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory",
abstract = "The origin and the locations of the hole traps in the oxide-nitride-oxide (ONO) structure fabricated on a p-type Si substrate were investigated by using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. The C-V loop was used not only to evaluate the memory effect of the ONO capacitor but also to determine suitable bias conditions for DLTS. Then, hole traps were found to be distributed over energy levels of 0.49 ∼ 0.64 eV above the valence band maximum of Si and their origin was attributed to a combination of nitride and the SiO2/Si interface by using small-pulse DLTS and filling -bias- dependent DLTS techniques.",
keywords = "Charge trap, Hole trap, ONO, SONOS",
author = "Seo, {Yu Jeong} and Kim, {Kyoung Chan} and Kim, {Hee Dong} and Kim, {Tae Geun} and An, {Ho Myoung}",
year = "2008",
month = "12",
day = "1",
doi = "10.3938/jkps.53.3302",
language = "English",
volume = "53",
pages = "3302--3306",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "6",

}

TY - JOUR

T1 - Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory

AU - Seo, Yu Jeong

AU - Kim, Kyoung Chan

AU - Kim, Hee Dong

AU - Kim, Tae Geun

AU - An, Ho Myoung

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The origin and the locations of the hole traps in the oxide-nitride-oxide (ONO) structure fabricated on a p-type Si substrate were investigated by using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. The C-V loop was used not only to evaluate the memory effect of the ONO capacitor but also to determine suitable bias conditions for DLTS. Then, hole traps were found to be distributed over energy levels of 0.49 ∼ 0.64 eV above the valence band maximum of Si and their origin was attributed to a combination of nitride and the SiO2/Si interface by using small-pulse DLTS and filling -bias- dependent DLTS techniques.

AB - The origin and the locations of the hole traps in the oxide-nitride-oxide (ONO) structure fabricated on a p-type Si substrate were investigated by using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. The C-V loop was used not only to evaluate the memory effect of the ONO capacitor but also to determine suitable bias conditions for DLTS. Then, hole traps were found to be distributed over energy levels of 0.49 ∼ 0.64 eV above the valence band maximum of Si and their origin was attributed to a combination of nitride and the SiO2/Si interface by using small-pulse DLTS and filling -bias- dependent DLTS techniques.

KW - Charge trap

KW - Hole trap

KW - ONO

KW - SONOS

UR - http://www.scopus.com/inward/record.url?scp=58249124351&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58249124351&partnerID=8YFLogxK

U2 - 10.3938/jkps.53.3302

DO - 10.3938/jkps.53.3302

M3 - Article

VL - 53

SP - 3302

EP - 3306

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 6

ER -