Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory

Yu Jeong Seo, Kyoung Chan Kim, Hee Dong Kim, Tae Geun Kim, Ho Myoung An

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The origin and the locations of the hole traps in the oxide-nitride-oxide (ONO) structure fabricated on a p-type Si substrate were investigated by using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. The C-V loop was used not only to evaluate the memory effect of the ONO capacitor but also to determine suitable bias conditions for DLTS. Then, hole traps were found to be distributed over energy levels of 0.49 ∼ 0.64 eV above the valence band maximum of Si and their origin was attributed to a combination of nitride and the SiO2/Si interface by using small-pulse DLTS and filling -bias- dependent DLTS techniques.

Original languageEnglish
Pages (from-to)3302-3306
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number6
DOIs
Publication statusPublished - 2008 Dec

Keywords

  • Charge trap
  • Hole trap
  • ONO
  • SONOS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Study of hole traps in the oxide-nitride-oxide structure of the SONOS flash memory'. Together they form a unique fingerprint.

  • Cite this