Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Yuyin Xi, Lu Liu, Ya Hsi Hwang, Oluwadamilola Phillips, Fan Ren, Stephen J. Pearton, Ji Hyun Kim, Chien Hsing Hsu, Chien Fong Lo, Jerry Wayne Johnson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

Original languageEnglish
Article number032202
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number3
DOIs
Publication statusPublished - 2013 May 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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