Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Yuyin Xi; Lu Liu; Ya Hsi Hwang; Oluwadamilola Phillips; Fan Ren; Stephen J. Pearton; Jihyun Kim; Chien Hsing Hsu; Chien Fong Lo; Jerry Wayne Johnson

doi:10.1116/1.4798612

Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Yuyin Xi, Lu Liu, Ya Hsi Hwang, Oluwadamilola Phillips, Fan Ren, Stephen J. Pearton, Jihyun Kim, Chien Hsing Hsu, Chien Fong Lo, Jerry Wayne Johnson

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t₉₀. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

Original language	English
Article number	032202
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4798612
Publication status	Published - 2013 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure",

abstract = "The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.",

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journal = "Journal of Vacuum Science and Technology B",

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T1 - Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

AU - Xi, Yuyin

AU - Liu, Lu

AU - Hwang, Ya Hsi

AU - Phillips, Oluwadamilola

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Jihyun

AU - Hsu, Chien Hsing

AU - Lo, Chien Fong

AU - Wayne Johnson, Jerry

PY - 2013/5

Y1 - 2013/5

N2 - The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

AB - The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

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M3 - Article

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VL - 31

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 3

M1 - 032202

ER -

Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Abstract

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