Abstract
Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments.
Original language | English |
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Title of host publication | COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network |
Pages | 244-246 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 2006 Dec 1 |
Event | COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network - Jeju, Korea, Republic of Duration: 2006 Jul 9 → 2006 Jul 13 |
Other
Other | COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network |
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Country | Korea, Republic of |
City | Jeju |
Period | 06/7/9 → 06/7/13 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
Study of integrated multiple-wavelength quantum well laser structures using QWI. / Kyoung, Sun Choi; Young, Tae Byun; Jong, Han Song; Lee, Seok; Deok, Ha Woo; Sun, Ho Kim; Young, Min Jhon; Park, Jinwoo.
COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network. 2006. p. 244-246 4454560.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study of integrated multiple-wavelength quantum well laser structures using QWI
AU - Kyoung, Sun Choi
AU - Young, Tae Byun
AU - Jong, Han Song
AU - Lee, Seok
AU - Deok, Ha Woo
AU - Sun, Ho Kim
AU - Young, Min Jhon
AU - Park, Jinwoo
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments.
AB - Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments.
UR - http://www.scopus.com/inward/record.url?scp=50149115963&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50149115963&partnerID=8YFLogxK
U2 - 10.1109/COINNGNCON.2006.4454560
DO - 10.1109/COINNGNCON.2006.4454560
M3 - Conference contribution
AN - SCOPUS:50149115963
SN - 8995530146
SN - 9788995530146
SP - 244
EP - 246
BT - COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network
ER -