Study of structural defects in CdZnTe crystals by high resolution electron microscopy

A. Hossain; A. E. Bolotnikov; G. S. Camarda; Y. Cui; R. Gul; K. H. Kim; K. Kisslinger; D. Su; G. Yang; L. H. Zhang; R. B. James

doi:10.1557/opl.2011.1206

Study of structural defects in CdZnTe crystals by high resolution electron microscopy

A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, R. Gul, K. H. Kim, K. Kisslinger, D. Su, G. Yang, L. H. Zhang, R. B. James

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

Original language	English
Title of host publication	Nuclear Radiation Detection Materials - 2011
Pages	67-71
Number of pages	5
DOIs	https://doi.org/10.1557/opl.2011.1206
Publication status	Published - 2012
Externally published	Yes
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 2011 Apr 25 → 2011 Apr 29

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1341
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	11/4/25 → 11/4/29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2011.1206

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Hossain, A., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Gul, R., Kim, K. H., Kisslinger, K., Su, D., Yang, G., Zhang, L. H., & James, R. B. (2012). Study of structural defects in CdZnTe crystals by high resolution electron microscopy. In Nuclear Radiation Detection Materials - 2011 (pp. 67-71). (Materials Research Society Symposium Proceedings; Vol. 1341). https://doi.org/10.1557/opl.2011.1206

Study of structural defects in CdZnTe crystals by high resolution electron microscopy. / Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Gul, R.; Kim, K. H.; Kisslinger, K.; Su, D.; Yang, G.; Zhang, L. H.; James, R. B.

Nuclear Radiation Detection Materials - 2011. 2012. p. 67-71 (Materials Research Society Symposium Proceedings; Vol. 1341).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hossain, A, Bolotnikov, AE, Camarda, GS, Cui, Y, Gul, R, Kim, KH, Kisslinger, K, Su, D, Yang, G, Zhang, LH & James, RB 2012, Study of structural defects in CdZnTe crystals by high resolution electron microscopy. in Nuclear Radiation Detection Materials - 2011. Materials Research Society Symposium Proceedings, vol. 1341, pp. 67-71, 2011 MRS Spring Meeting, San Francisco, CA, United States, 11/4/25. https://doi.org/10.1557/opl.2011.1206

@inproceedings{1c80289a8b86490b8422cabbb124cdde,

title = "Study of structural defects in CdZnTe crystals by high resolution electron microscopy",

abstract = "We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.",

author = "A. Hossain and Bolotnikov, {A. E.} and Camarda, {G. S.} and Y. Cui and R. Gul and Kim, {K. H.} and K. Kisslinger and D. Su and G. Yang and Zhang, {L. H.} and James, {R. B.}",

note = "Funding Information: This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.; 2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",

year = "2012",

doi = "10.1557/opl.2011.1206",

language = "English",

isbn = "9781605113180",

series = "Materials Research Society Symposium Proceedings",

pages = "67--71",

booktitle = "Nuclear Radiation Detection Materials - 2011",

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AU - Hossain, A.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Cui, Y.

AU - Gul, R.

AU - Kim, K. H.

AU - Kisslinger, K.

AU - Su, D.

AU - Yang, G.

AU - Zhang, L. H.

AU - James, R. B.

N1 - Funding Information: This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.

PY - 2012

Y1 - 2012

N2 - We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

AB - We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

UR - http://www.scopus.com/inward/record.url?scp=84863166537&partnerID=8YFLogxK

U2 - 10.1557/opl.2011.1206

DO - 10.1557/opl.2011.1206

M3 - Conference contribution

AN - SCOPUS:84863166537

SN - 9781605113180

T3 - Materials Research Society Symposium Proceedings

SP - 67

EP - 71

BT - Nuclear Radiation Detection Materials - 2011

T2 - 2011 MRS Spring Meeting

Y2 - 25 April 2011 through 29 April 2011

ER -

Study of structural defects in CdZnTe crystals by high resolution electron microscopy

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