Study of structural defects in CdZnTe crystals by high resolution electron microscopy

A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, R. Gul, K. H. Kim, K. Kisslinger, D. Su, G. Yang, L. H. Zhang, R. B. James

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

Original languageEnglish
Title of host publicationNuclear Radiation Detection Materials - 2011
Pages67-71
Number of pages5
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2011 Apr 252011 Apr 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1341
ISSN (Print)0272-9172

Conference

Conference2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period11/4/2511/4/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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