Study of the Electrical and Structural Characteristics of Al/Pt Ohmic Contacts on n-Type ZnO Epitaxial Layer

Han K. Kim, I. Adesida, K. K. Kim, S. J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We have investigated Al/Pt (20/50 nm) ohmic contacts on a n-type zinc oxide (ZnO:Al) epitaxial layer. The samples were annealed at temperatures of 300°C and 600°C for 1 min in nitrogen ambient. Current-voltage measurements indicated that the as-deposited sample was ohmic with a specific contact resistivity of 1.25 (±0.05) × 10-5 Ω cm2. However, the annealing at 300°C resulted in a significantly better ohmic behavior, with a contact resistivity of 2 (±0.25) × 10-6 Ω cm2. A further increase in the annealing temperature to 600°C led to a decrease in specific contact resistivity due to extensive interfacial reactions between AI and ZnO. Both Auger electron spectroscopy and glancing angle X-ray diffraction were employed to investigate the nature of the interfacial reaction between the Al/Pt and ZnO layer with increasing annealing temperature. Possible explanation is given to describe the temperature dependence of the specific contact resistivity.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume151
Issue number4
DOIs
Publication statusPublished - 2004 May 7
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this