Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films

Ji Eun Lee, Jun Sik Cho, Joo Hyoung Park, Dong Hwan Kim, Jinsoo Song, Jeong Chul Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages3031-3033
Number of pages3
DOIs
Publication statusPublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011 Jun 192011 Jun 24

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period11/6/1911/6/24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Lee, J. E., Cho, J. S., Park, J. H., Kim, D. H., Song, J., & Lee, J. C. (2011). Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 3031-3033). [6186583] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186583