Abstract
In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Pages | 003031-003033 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
| Event | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 2011 Jun 19 → 2011 Jun 24 |
Other
| Other | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
|---|---|
| Country | United States |
| City | Seattle, WA |
| Period | 11/6/19 → 11/6/24 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Cite this
Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. / Lee, Ji Eun; Cho, Jun Sik; Park, Joo Hyoung; Kim, Donghwan; Song, Jinsoo; Lee, Jeong Chul.
Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 003031-003033 6186583.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films
AU - Lee, Ji Eun
AU - Cho, Jun Sik
AU - Park, Joo Hyoung
AU - Kim, Donghwan
AU - Song, Jinsoo
AU - Lee, Jeong Chul
PY - 2011/12/1
Y1 - 2011/12/1
N2 - In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.
AB - In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.
UR - http://www.scopus.com/inward/record.url?scp=84861058423&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861058423&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186583
DO - 10.1109/PVSC.2011.6186583
M3 - Conference contribution
AN - SCOPUS:84861058423
SN - 9781424499656
SP - 3031
EP - 3033
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
ER -