TY - GEN
T1 - Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films
AU - Lee, Ji Eun
AU - Cho, Jun Sik
AU - Park, Joo Hyoung
AU - Kim, Dong Hwan
AU - Song, Jinsoo
AU - Lee, Jeong Chul
PY - 2011
Y1 - 2011
N2 - In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.
AB - In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.
UR - http://www.scopus.com/inward/record.url?scp=84861058423&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186583
DO - 10.1109/PVSC.2011.6186583
M3 - Conference contribution
AN - SCOPUS:84861058423
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3031
EP - 3033
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -