Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films

Ji Eun Lee, Jun Sik Cho, Joo Hyoung Park, Donghwan Kim, Jinsoo Song, Jeong Chul Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH 4, H 2 and CO 2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO 2 to SiH 4, and hydrogen dilution concentration. By introducing the CO 2 gas, three kinds of O-related IR features are found at 780, 980 and 2090 cm -1. With increasing the CO 2/SiH 4 ratio, the absorption at 780 cm -1 strongly coupled to the Si-H and Si-O-Si motions increases noticeably, indicating that the defect density in the films increases because the mode at 780 cm -1 is unique signature of a particularly local geometry related to defects. In order to diminish the defect density level in the films, hydrogen dilution was performed. As the H dilution concentration increases, the defect density is reduced significantly and the photo-conductivity is improved to 10 -4 S/cm. Influences of oxygen incorporation into the Si network and H dilution on the performance of a-SiO:H solar cells are also examined in detail.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages003031-003033
Number of pages3
DOIs
Publication statusPublished - 2011 Dec 1
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011 Jun 192011 Jun 24

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period11/6/1911/6/24

Fingerprint

Silicon oxides
Dilution
Oxide films
Defect density
Defects
Oxygen
Hydrogen
Plasma enhanced chemical vapor deposition
Gases
Gas mixtures
Structural properties
Solar cells
Electric properties
Optical properties
Geometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Lee, J. E., Cho, J. S., Park, J. H., Kim, D., Song, J., & Lee, J. C. (2011). Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 003031-003033). [6186583] https://doi.org/10.1109/PVSC.2011.6186583

Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. / Lee, Ji Eun; Cho, Jun Sik; Park, Joo Hyoung; Kim, Donghwan; Song, Jinsoo; Lee, Jeong Chul.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 003031-003033 6186583.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JE, Cho, JS, Park, JH, Kim, D, Song, J & Lee, JC 2011, Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6186583, pp. 003031-003033, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 11/6/19. https://doi.org/10.1109/PVSC.2011.6186583
Lee JE, Cho JS, Park JH, Kim D, Song J, Lee JC. Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 003031-003033. 6186583 https://doi.org/10.1109/PVSC.2011.6186583
Lee, Ji Eun ; Cho, Jun Sik ; Park, Joo Hyoung ; Kim, Donghwan ; Song, Jinsoo ; Lee, Jeong Chul. / Study on defects related to local bonding of oxygen in hydrogenated silicon oxide films. Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. pp. 003031-003033
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