Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Shihyun Ahn, Chen Dong, Weidi Zhu, Byung Jae Kim, Ya His Hwang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Ji Hyun Kim, Ivan Kravchenko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The effects of proton irradiation energy on Al2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 1015 cm-2. After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs' saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm-1, having lower energy with the highest removal rate.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages129-135
Number of pages7
Volume69
Edition14
ISBN (Print)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • Engineering(all)

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