Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers

Dongwon Lim, Kisu Kim, Sungdong Kim, Won Young Jeung, Seong Rae Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)n, should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs.

Original languageEnglish
Article number4957779
Pages (from-to)2407-2409
Number of pages3
JournalIEEE Transactions on Magnetics
Volume45
Issue number6
DOIs
Publication statusPublished - 2009 Jun 1

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Tunnel junctions
Multilayers
Exchange coupling
Magnetoresistance
Buffer layers
Anisotropy

Keywords

  • Exchange biased
  • Pd/Co
  • Perpendicular MTJ

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers. / Lim, Dongwon; Kim, Kisu; Kim, Sungdong; Jeung, Won Young; Lee, Seong Rae.

In: IEEE Transactions on Magnetics, Vol. 45, No. 6, 4957779, 01.06.2009, p. 2407-2409.

Research output: Contribution to journalArticle

Lim, Dongwon ; Kim, Kisu ; Kim, Sungdong ; Jeung, Won Young ; Lee, Seong Rae. / Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers. In: IEEE Transactions on Magnetics. 2009 ; Vol. 45, No. 6. pp. 2407-2409.
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