Study on hermetic glass sealing using a modified direct bonding method

Byeong Kwon Ju, C. G. Ko, Yun-Hi Lee, I. B. Kang, P. White, N. Samaan, M. Haskard, M. H. Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm 2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM.L. Reed, M. Elwenspoek, S. Johansson, E. Obermeier, H. Fujita, Y. Uenishi
PublisherMaterials Research Society
Pages123-129
Number of pages7
Volume444
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 41996 Dec 5

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/496/12/5

Fingerprint

Glass
Hydroxyl Radical
Siloxanes
Water
Silicon wafers
Temperature
Hydrogen bonds
Surface roughness
Annealing
Oxygen
Hermetic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ju, B. K., Ko, C. G., Lee, Y-H., Kang, I. B., White, P., Samaan, N., ... Oh, M. H. (1997). Study on hermetic glass sealing using a modified direct bonding method. In M. L. Reed, M. Elwenspoek, S. Johansson, E. Obermeier, H. Fujita, & Y. Uenishi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 444, pp. 123-129). Materials Research Society.

Study on hermetic glass sealing using a modified direct bonding method. / Ju, Byeong Kwon; Ko, C. G.; Lee, Yun-Hi; Kang, I. B.; White, P.; Samaan, N.; Haskard, M.; Oh, M. H.

Materials Research Society Symposium - Proceedings. ed. / M.L. Reed; M. Elwenspoek; S. Johansson; E. Obermeier; H. Fujita; Y. Uenishi. Vol. 444 Materials Research Society, 1997. p. 123-129.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, BK, Ko, CG, Lee, Y-H, Kang, IB, White, P, Samaan, N, Haskard, M & Oh, MH 1997, Study on hermetic glass sealing using a modified direct bonding method. in ML Reed, M Elwenspoek, S Johansson, E Obermeier, H Fujita & Y Uenishi (eds), Materials Research Society Symposium - Proceedings. vol. 444, Materials Research Society, pp. 123-129, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 96/12/4.
Ju BK, Ko CG, Lee Y-H, Kang IB, White P, Samaan N et al. Study on hermetic glass sealing using a modified direct bonding method. In Reed ML, Elwenspoek M, Johansson S, Obermeier E, Fujita H, Uenishi Y, editors, Materials Research Society Symposium - Proceedings. Vol. 444. Materials Research Society. 1997. p. 123-129
Ju, Byeong Kwon ; Ko, C. G. ; Lee, Yun-Hi ; Kang, I. B. ; White, P. ; Samaan, N. ; Haskard, M. ; Oh, M. H. / Study on hermetic glass sealing using a modified direct bonding method. Materials Research Society Symposium - Proceedings. editor / M.L. Reed ; M. Elwenspoek ; S. Johansson ; E. Obermeier ; H. Fujita ; Y. Uenishi. Vol. 444 Materials Research Society, 1997. pp. 123-129
@inproceedings{8f2704c754cf4e6fb68f156e0b366bf2,
title = "Study on hermetic glass sealing using a modified direct bonding method",
abstract = "This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95{\%} of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm 2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.",
author = "Ju, {Byeong Kwon} and Ko, {C. G.} and Yun-Hi Lee and Kang, {I. B.} and P. White and N. Samaan and M. Haskard and Oh, {M. H.}",
year = "1997",
language = "English",
volume = "444",
pages = "123--129",
editor = "M.L. Reed and M. Elwenspoek and S. Johansson and E. Obermeier and H. Fujita and Y. Uenishi",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Study on hermetic glass sealing using a modified direct bonding method

AU - Ju, Byeong Kwon

AU - Ko, C. G.

AU - Lee, Yun-Hi

AU - Kang, I. B.

AU - White, P.

AU - Samaan, N.

AU - Haskard, M.

AU - Oh, M. H.

PY - 1997

Y1 - 1997

N2 - This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm 2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

AB - This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm 2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

UR - http://www.scopus.com/inward/record.url?scp=0030705287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030705287&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030705287

VL - 444

SP - 123

EP - 129

BT - Materials Research Society Symposium - Proceedings

A2 - Reed, M.L.

A2 - Elwenspoek, M.

A2 - Johansson, S.

A2 - Obermeier, E.

A2 - Fujita, H.

A2 - Uenishi, Y.

PB - Materials Research Society

ER -