Study on hydrogen passivation behavior of SiNx film and its thermal annealing effect

Ji Yeon Hyun, Se Jin Park, Soohyun Bae, Hyunjung Park, Dongkyun Kang, Seung Hoon Lee, Haeseok Lee, Yoon Mook Kang, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al2 O3/SiNX passivation stacks have been widely adopted for high-efficiency silicon solar cells. We explored the effects of annealing step procedure and annealing temperature. It was shown that high iVoc were achieved when post annealing treatment performed than pre annealing. The reason for this result was analyzed by ATP images and SIMS profile. Post annealing treatment showed that hydrogen of SiNx migrates to between the silicon surface and Al2O3

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3102-3104
Number of pages3
ISBN (Electronic)9781538685297
DOIs
Publication statusPublished - 2018 Nov 26
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 2018 Jun 102018 Jun 15

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period18/6/1018/6/15

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Hyun, J. Y., Park, S. J., Bae, S., Park, H., Kang, D., Lee, S. H., Lee, H., Kang, Y. M., & Kim, D. (2018). Study on hydrogen passivation behavior of SiNx film and its thermal annealing effect. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3102-3104). [8547267] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547267