Abstract
We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 1801-1803 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 16 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2004 Aug 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Atomic and Molecular Physics, and Optics
Cite this
Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure. / Heo, Duchang; Han, Il K.; Lee, Jung I.; Jeong, Jichai.
In: IEEE Photonics Technology Letters, Vol. 16, No. 8, 01.08.2004, p. 1801-1803.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure
AU - Heo, Duchang
AU - Han, Il K.
AU - Lee, Jung I.
AU - Jeong, Jichai
PY - 2004/8/1
Y1 - 2004/8/1
N2 - We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.
AB - We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.
UR - http://www.scopus.com/inward/record.url?scp=4043107154&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4043107154&partnerID=8YFLogxK
U2 - 10.1109/LPT.2004.829772
DO - 10.1109/LPT.2004.829772
M3 - Article
VL - 16
SP - 1801
EP - 1803
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 8
ER -