TY - JOUR
T1 - Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure
AU - Heo, Duchang
AU - Han, Il Ki
AU - Lee, Jung Il
AU - Jeong, Jichai
N1 - Funding Information:
Manuscript received January 9, 2004; revised April 3, 2004. This work is supported in part by the Korean Ministry of Science and Technology through the National Research Laboratory (NRL). D. Heo, I. K. Han, and J. I. Lee are with the Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea (e-mail: hikoel@kist.re.kr). J. Jeong is with the Department of Radio Communications Engineering, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/LPT.2004.829772 Fig. 1. (a) Schematic band structure of InGaAs–InGaAsP–InP MQW active layer with two-step SCH (confining–bounding) layer. (b) Doping concentration-depth profile of the structures.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/8
Y1 - 2004/8
N2 - We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.
AB - We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.
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U2 - 10.1109/LPT.2004.829772
DO - 10.1109/LPT.2004.829772
M3 - Article
AN - SCOPUS:4043107154
VL - 16
SP - 1801
EP - 1803
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 8
ER -