Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

Duchang Heo, Il K. Han, Jung I. Lee, Jichai Jeong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.

Original languageEnglish
Pages (from-to)1801-1803
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number8
DOIs
Publication statusPublished - 2004 Aug 1

Fingerprint

Semiconductor lasers
Heterojunctions
semiconductor lasers
Threshold current density
Optical losses
threshold currents
Doping (additives)
current density
slopes
Electrons
electrons
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure. / Heo, Duchang; Han, Il K.; Lee, Jung I.; Jeong, Jichai.

In: IEEE Photonics Technology Letters, Vol. 16, No. 8, 01.08.2004, p. 1801-1803.

Research output: Contribution to journalArticle

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