Abstract
We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 1801-1803 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 16 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2004 Aug 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Heo, D., Han, I. K., Lee, J. I., & Jeong, J. (2004). Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure. IEEE Photonics Technology Letters, 16(8), 1801-1803. https://doi.org/10.1109/LPT.2004.829772