Study on minority carrier lifetime of n-HgZnTe by photoconductive decay method

Ki Nam Oh, Kihyun Kim, Tin Ki Hong, Yun Chul Chung, Sun Ung Kim, Mann Jang Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The photoconductive decay (PCD) method of determining the excess carrier lifetime of HgZnTe and its dependence on surface passivation are studied. The measured value for the lifetime shows good agreement with the summed value for the Auger and Shockley-Read lifetime. By solving a one-dimensional transport equation, the surface recombination velocity is obtained for the different surface passivation state. From these results, the surface activation energy is calculated.

Original languageEnglish
Pages (from-to)1247-1252
Number of pages6
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Carrier lifetime
carrier lifetime
minority carriers
decay
Passivation
passivity
life (durability)
Activation energy
activation energy

Keywords

  • Activation energy
  • HgZnTe
  • Lifetime
  • Passivation
  • Photocondutive decay

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Study on minority carrier lifetime of n-HgZnTe by photoconductive decay method. / Oh, Ki Nam; Kim, Kihyun; Hong, Tin Ki; Chung, Yun Chul; Kim, Sun Ung; Park, Mann Jang.

In: Journal of Crystal Growth, Vol. 184-185, 01.01.1998, p. 1247-1252.

Research output: Contribution to journalArticle

Oh, Ki Nam ; Kim, Kihyun ; Hong, Tin Ki ; Chung, Yun Chul ; Kim, Sun Ung ; Park, Mann Jang. / Study on minority carrier lifetime of n-HgZnTe by photoconductive decay method. In: Journal of Crystal Growth. 1998 ; Vol. 184-185. pp. 1247-1252.
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