Study on modified silicon surface after CHF3/C2F6 reactive ion etching

Hyung Ho Park, Kwang Ho Kwon, Sang Hwan Lee, Byung Hwa Koak, Sahn Nahm, Hee Tae Lee, Kyoung Ik Cho, Oh Joon Kwon, Young II Kang

Research output: Contribution to journalArticle

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Abstract

The effects of reactive ion etching (RIE) of SiO2 layer in CHF3 / C2F6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O2, NF3, SF6, and Cl2 plasma treatments. XPS analysis revealed that NF3 treatment is most effective. With 10 seconds exposure to NF3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

Original languageEnglish
Pages (from-to)45-57
Number of pages13
JournalETRI Journal
Volume16
Issue number1
Publication statusPublished - 1994 Apr 1

Fingerprint

Fluorine
Reactive ion etching
Silicon
Carbon
X ray photoelectron spectroscopy
Plasmas
Fluorocarbons
Chemical bonds
Rutherford backscattering spectroscopy
Mass spectrometers
High resolution transmission electron microscopy
Surface structure
Hydrogen
Cleaning
Ions
Oxygen
Crystalline materials
Atoms
Defects
fluoroform

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Park, H. H., Kwon, K. H., Lee, S. H., Koak, B. H., Nahm, S., Lee, H. T., ... Kang, Y. II. (1994). Study on modified silicon surface after CHF3/C2F6 reactive ion etching. ETRI Journal, 16(1), 45-57.

Study on modified silicon surface after CHF3/C2F6 reactive ion etching. / Park, Hyung Ho; Kwon, Kwang Ho; Lee, Sang Hwan; Koak, Byung Hwa; Nahm, Sahn; Lee, Hee Tae; Cho, Kyoung Ik; Kwon, Oh Joon; Kang, Young II.

In: ETRI Journal, Vol. 16, No. 1, 01.04.1994, p. 45-57.

Research output: Contribution to journalArticle

Park, HH, Kwon, KH, Lee, SH, Koak, BH, Nahm, S, Lee, HT, Cho, KI, Kwon, OJ & Kang, YII 1994, 'Study on modified silicon surface after CHF3/C2F6 reactive ion etching', ETRI Journal, vol. 16, no. 1, pp. 45-57.
Park HH, Kwon KH, Lee SH, Koak BH, Nahm S, Lee HT et al. Study on modified silicon surface after CHF3/C2F6 reactive ion etching. ETRI Journal. 1994 Apr 1;16(1):45-57.
Park, Hyung Ho ; Kwon, Kwang Ho ; Lee, Sang Hwan ; Koak, Byung Hwa ; Nahm, Sahn ; Lee, Hee Tae ; Cho, Kyoung Ik ; Kwon, Oh Joon ; Kang, Young II. / Study on modified silicon surface after CHF3/C2F6 reactive ion etching. In: ETRI Journal. 1994 ; Vol. 16, No. 1. pp. 45-57.
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