Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Lu Liu, Ya Hsi Hwang, Yuyin Xi, Fan Ren, Valentin Craciun, Stephen J. Pearton, Gwangseok Yang, Hong Yeol Kim, Jihyun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The effects of proton irradiation dose on the dc characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with source field plates were studied. The HEMTs were irradiated with various protons doses ranging from 5×1012 to 5×1015cm-2 at a fixed energy of 5 MeV. HEMTs irradiated with proton dose below 5×10 13cm-2 showed less than 2% degradation of either saturation drain current (IDSS) or transconductance (gm). Significant changes of these parameters were observed for the devices irradiated with doses above 5×1013cm-2. HEMTs irradiated with the highest proton dose of 5×1015cm-2 showed a reduction of IDSS and gm of 86% and 64.7%, and a positive Vth shift of 0.84V, respectively. Despite the significant I DSS and gm reductions, the off-state drain breakdown voltage (VBR) was improved more than five times at this particular irradiation condition. The significant improvement of off-state drain breakdown voltage was attributed to the formation of a virtual gate at drain side of gate edge, which was the result of the generation of defect centers at AlGaN/GaN interface.

Original languageEnglish
Article number022202
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number2
DOIs
Publication statusPublished - 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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