Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

Hyun Seok Lee, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dielectric properties of Ba 0.65Sr 0.35TiO 3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1 μm have been successfully grown on a Si (100) substrate at 400 °C using the electron beam assisted ICBE system with a plasma O 2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500 angstroms deposited at a substrate temperature of 400 °C has a dielectric constant of 1191 and a leakage current of about 2.37×10 -9 A/cm 2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages63-68
Number of pages6
Volume441
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/6

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, H. S., & Sung, M. Y. (1997). Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication. In Materials Research Society Symposium - Proceedings (Vol. 441, pp. 63-68). Materials Research Society.