Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

Hyun Seok Lee, Man Young Sung

Research output: Contribution to journalConference articlepeer-review

Abstract

The dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1 μm have been successfully grown on a Si (100) substrate at 400 °C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500 angstroms deposited at a substrate temperature of 400 °C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume441
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication'. Together they form a unique fingerprint.

Cite this