Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

Engineering & Materials Science

• Ferroelectric thin films 100%
• Epitaxial growth 80%
• Fabrication 42%
• Electron beams 33%
• Permittivity 28%
• Plasma sources 23%
• Substrates 20%
• Dielectric properties 17%
• Leakage currents 15%
• Capacitors 11%
• Temperature 5%

Chemical Compounds

• Epitaxial Growth 69%
• Molecular Cluster 37%
• Electron Beam 31%
• Liquid Film 27%
• Dielectric Constant 26%
• Leakage Current 18%
• Application 18%
• Capacitor 14%
• Dielectric Property 14%
• Dielectric Material 12%
• Plasma 8%

Physics & Astronomy

• epitaxy 56%
• fabrication 34%
• thin films 29%
• electron beams 20%
• permittivity 19%
• capacitors 12%
• dielectric properties 11%
• leakage 11%