Sub 50 nm nano-patterns with carbon based spin-on organic hardmask

Ju Hyeon Shin, Ki Yeon Yang, Kang Soo Han, Hyeong Seok Kim, Heon Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was co tompared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosi ize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si 3N 4 layer. However, such a nano-structure was able to be formed by etching the Si 3N 4 layer using C-SOH as an etch mask.

Original languageEnglish
Pages (from-to)3364-3368
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Fingerprint

Carbon
carbon
resins
Resins
Polymethyl Methacrylate
Masks
Polymethyl methacrylates
polymethyl methacrylate
Etching
masks
etching
Lithography
lithography
Plasmas

Keywords

  • Carbon based spin-on organic hardmask (C-SOH)
  • Etch resistance
  • Nanoimprint lithography
  • Poly(methyl methacrylate) (PMMA)
  • Polyurethaneacrylate (PUA)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Sub 50 nm nano-patterns with carbon based spin-on organic hardmask. / Shin, Ju Hyeon; Yang, Ki Yeon; Han, Kang Soo; Kim, Hyeong Seok; Lee, Heon.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 06.07.2012, p. 3364-3368.

Research output: Contribution to journalArticle

Shin, Ju Hyeon ; Yang, Ki Yeon ; Han, Kang Soo ; Kim, Hyeong Seok ; Lee, Heon. / Sub 50 nm nano-patterns with carbon based spin-on organic hardmask. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 4. pp. 3364-3368.
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