Sub 50 nm nano-patterns with carbon based spin-on organic hardmask

Ju Hyeon Shin, Ki Yeon Yang, Kang Soo Han, Hyeong Seok Kim, Heon Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was co tompared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosi ize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si 3N 4 layer. However, such a nano-structure was able to be formed by etching the Si 3N 4 layer using C-SOH as an etch mask.

Original languageEnglish
Pages (from-to)3364-3368
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Keywords

  • Carbon based spin-on organic hardmask (C-SOH)
  • Etch resistance
  • Nanoimprint lithography
  • Poly(methyl methacrylate) (PMMA)
  • Polyurethaneacrylate (PUA)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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