Substrate and layout engineering to suppress self-heating in floating body transistors

S. H. Shin, S. H. Kim, Sangsig Kim, H. Wu, P. D. Ye, M. A. Alam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Self-heating (SH) has emerged as an important performance, variability, and reliability concern for floating body transistors (FB-FET), namely, extremely-thin-silicon-on-insulator (ETSOI), SOI-FinFET, gate-all-round NW-FET (GAA-FETs), etc. The floating body topology offers electrostatic control, but restricts heat outflow: apparently an intrinsic trade-off. In this paper, we trace the trajectory of heat flow in a broad range of transistors to show that the trade-off is not fundamental, and self-heating can be suppressed by novel device designs that ease thermal bottlenecks. Towards this goal, we (i) characterize SH in various FB-FETs with different channel materials (Si, Ge, InGaAs) by submicron thermo-reflectance imaging; (ii) identify universal features and common thermal bottlenecks across various transistor technologies, (iii) offer novel, technology-aware device design to ease the bottlenecks and reduce self-heating, and (iv) experimentally demonstrate the effectiveness of these strategies in suppressing self-heating. We conclude that thermal aware transistor design can suppress self-heating without compromising performance and electrostatic control of the transistor.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.7.1-15.7.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - 2017 Jan 31
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period16/12/316/12/7

Fingerprint

layouts
floating
Transistors
transistors
engineering
Heating
heating
Substrates
Field effect transistors
field effect transistors
Electrostatics
electrostatics
SOI (semiconductors)
Silicon
heat transmission
topology
Trajectories
Topology
insulators
trajectories

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Shin, S. H., Kim, S. H., Kim, S., Wu, H., Ye, P. D., & Alam, M. A. (2017). Substrate and layout engineering to suppress self-heating in floating body transistors. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 15.7.1-15.7.4). [7838426] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838426

Substrate and layout engineering to suppress self-heating in floating body transistors. / Shin, S. H.; Kim, S. H.; Kim, Sangsig; Wu, H.; Ye, P. D.; Alam, M. A.

2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 15.7.1-15.7.4 7838426.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shin, SH, Kim, SH, Kim, S, Wu, H, Ye, PD & Alam, MA 2017, Substrate and layout engineering to suppress self-heating in floating body transistors. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838426, Institute of Electrical and Electronics Engineers Inc., pp. 15.7.1-15.7.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 16/12/3. https://doi.org/10.1109/IEDM.2016.7838426
Shin SH, Kim SH, Kim S, Wu H, Ye PD, Alam MA. Substrate and layout engineering to suppress self-heating in floating body transistors. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 15.7.1-15.7.4. 7838426 https://doi.org/10.1109/IEDM.2016.7838426
Shin, S. H. ; Kim, S. H. ; Kim, Sangsig ; Wu, H. ; Ye, P. D. ; Alam, M. A. / Substrate and layout engineering to suppress self-heating in floating body transistors. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 15.7.1-15.7.4
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