Abstract
The authors present a highly efficient program method for high-speed, low-voltage, and multi-bit/cell operation in the conventional silicon/oxide/nitride/oxide/silicon structure. This method uses a forward bias for collecting the electrons into the substrate whilst both substrate and drain biases are used for injecting the electrons into the nitride layer. With an aid of the substrate bias for electron injection, we obtained a program time as short as 600 ns and an ultralow-voltage operation with a drain voltage of 2 V and a substrate voltage of -3 V. In addition, a localized chargeinjection near the junction edge was confirmed with a threshold voltage difference of 1 V between the forward and reverse read.
| Original language | English |
|---|---|
| Article number | 124201 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Substrate-bias assisted hot electron injection method for high-speed, low-voltage, and multi-bit flash memories. / An, Ho Myoung; Kim, Hee Dong; Zhang, Yongjie; Seo, Yu Jeong; Kim, Tae Geun.
In: Japanese Journal of Applied Physics, Vol. 50, No. 12, 124201, 01.12.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Substrate-bias assisted hot electron injection method for high-speed, low-voltage, and multi-bit flash memories
AU - An, Ho Myoung
AU - Kim, Hee Dong
AU - Zhang, Yongjie
AU - Seo, Yu Jeong
AU - Kim, Tae Geun
PY - 2011/12/1
Y1 - 2011/12/1
N2 - The authors present a highly efficient program method for high-speed, low-voltage, and multi-bit/cell operation in the conventional silicon/oxide/nitride/oxide/silicon structure. This method uses a forward bias for collecting the electrons into the substrate whilst both substrate and drain biases are used for injecting the electrons into the nitride layer. With an aid of the substrate bias for electron injection, we obtained a program time as short as 600 ns and an ultralow-voltage operation with a drain voltage of 2 V and a substrate voltage of -3 V. In addition, a localized chargeinjection near the junction edge was confirmed with a threshold voltage difference of 1 V between the forward and reverse read.
AB - The authors present a highly efficient program method for high-speed, low-voltage, and multi-bit/cell operation in the conventional silicon/oxide/nitride/oxide/silicon structure. This method uses a forward bias for collecting the electrons into the substrate whilst both substrate and drain biases are used for injecting the electrons into the nitride layer. With an aid of the substrate bias for electron injection, we obtained a program time as short as 600 ns and an ultralow-voltage operation with a drain voltage of 2 V and a substrate voltage of -3 V. In addition, a localized chargeinjection near the junction edge was confirmed with a threshold voltage difference of 1 V between the forward and reverse read.
UR - http://www.scopus.com/inward/record.url?scp=82955234152&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=82955234152&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.124201
DO - 10.1143/JJAP.50.124201
M3 - Article
AN - SCOPUS:82955234152
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
M1 - 124201
ER -