Substrate-bias assisted hot electron injection method for high-speed, low-voltage, and multi-bit flash memories

Ho Myoung An, Hee Dong Kim, Yongjie Zhang, Yu Jeong Seo, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The authors present a highly efficient program method for high-speed, low-voltage, and multi-bit/cell operation in the conventional silicon/oxide/nitride/oxide/silicon structure. This method uses a forward bias for collecting the electrons into the substrate whilst both substrate and drain biases are used for injecting the electrons into the nitride layer. With an aid of the substrate bias for electron injection, we obtained a program time as short as 600 ns and an ultralow-voltage operation with a drain voltage of 2 V and a substrate voltage of -3 V. In addition, a localized chargeinjection near the junction edge was confirmed with a threshold voltage difference of 1 V between the forward and reverse read.

Original languageEnglish
Article number124201
JournalJapanese Journal of Applied Physics
Volume50
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Electron injection
Flash memory
Hot electrons
hot electrons
low voltage
flash
high speed
injection
Silicon oxides
Electric potential
Substrates
silicon oxides
Nitrides
nitrides
electric potential
electrons
Electrons
Threshold voltage
threshold voltage
cells

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Substrate-bias assisted hot electron injection method for high-speed, low-voltage, and multi-bit flash memories. / An, Ho Myoung; Kim, Hee Dong; Zhang, Yongjie; Seo, Yu Jeong; Kim, Tae Geun.

In: Japanese Journal of Applied Physics, Vol. 50, No. 12, 124201, 01.12.2011.

Research output: Contribution to journalArticle

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