Abstract
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.
Original language | English |
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Article number | 5944946 |
Pages (from-to) | 1179-1181 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2011 Sep |
Keywords
- Gate-all-around (GAA)
- interface trap charge
- silicon nanowire field-effect transistor (SNWFET)
- subthreshold degradation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering