Abstract
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.
| Original language | English |
|---|---|
| Article number | 5944946 |
| Pages (from-to) | 1179-1181 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2011 Sep 1 |
Keywords
- Gate-all-around (GAA)
- interface trap charge
- silicon nanowire field-effect transistor (SNWFET)
- subthreshold degradation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Hong, B. H., Cho, N., Lee, S. J., Yu, Y. S., Choi, L., Jung, Y. C., Cho, K. H., Yeo, K. H., Kim, D. W., Jin, G. Y., Oh, K. S., Park, D., Song, S. H., Rieh, J. S., & Hwang, S. W. (2011). Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge. IEEE Electron Device Letters, 32(9), 1179-1181. [5944946]. https://doi.org/10.1109/LED.2011.2159473