Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors

Effect of interface trap charge

B. H. Hong, N. Cho, S. J. Lee, Y. S. Yu, L. Choi, Y. C. Jung, K. H. Cho, K. H. Yeo, D. W. Kim, G. Y. Jin, K. S. Oh, D. Park, S. H. Song, Jae-Sung Rieh, S. W. Hwang

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.

Original languageEnglish
Article number5944946
Pages (from-to)1179-1181
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Silicon
Field effect transistors
Nanowires
Degradation
Analytical models
Electrostatics

Keywords

  • Gate-all-around (GAA)
  • interface trap charge
  • silicon nanowire field-effect transistor (SNWFET)
  • subthreshold degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hong, B. H., Cho, N., Lee, S. J., Yu, Y. S., Choi, L., Jung, Y. C., ... Hwang, S. W. (2011). Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge. IEEE Electron Device Letters, 32(9), 1179-1181. [5944946]. https://doi.org/10.1109/LED.2011.2159473

Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors : Effect of interface trap charge. / Hong, B. H.; Cho, N.; Lee, S. J.; Yu, Y. S.; Choi, L.; Jung, Y. C.; Cho, K. H.; Yeo, K. H.; Kim, D. W.; Jin, G. Y.; Oh, K. S.; Park, D.; Song, S. H.; Rieh, Jae-Sung; Hwang, S. W.

In: IEEE Electron Device Letters, Vol. 32, No. 9, 5944946, 01.09.2011, p. 1179-1181.

Research output: Contribution to journalArticle

Hong, BH, Cho, N, Lee, SJ, Yu, YS, Choi, L, Jung, YC, Cho, KH, Yeo, KH, Kim, DW, Jin, GY, Oh, KS, Park, D, Song, SH, Rieh, J-S & Hwang, SW 2011, 'Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge', IEEE Electron Device Letters, vol. 32, no. 9, 5944946, pp. 1179-1181. https://doi.org/10.1109/LED.2011.2159473
Hong, B. H. ; Cho, N. ; Lee, S. J. ; Yu, Y. S. ; Choi, L. ; Jung, Y. C. ; Cho, K. H. ; Yeo, K. H. ; Kim, D. W. ; Jin, G. Y. ; Oh, K. S. ; Park, D. ; Song, S. H. ; Rieh, Jae-Sung ; Hwang, S. W. / Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors : Effect of interface trap charge. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 9. pp. 1179-1181.
@article{cb8d910900224380ae7b8fa981567872,
title = "Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge",
abstract = "We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.",
keywords = "Gate-all-around (GAA), interface trap charge, silicon nanowire field-effect transistor (SNWFET), subthreshold degradation",
author = "Hong, {B. H.} and N. Cho and Lee, {S. J.} and Yu, {Y. S.} and L. Choi and Jung, {Y. C.} and Cho, {K. H.} and Yeo, {K. H.} and Kim, {D. W.} and Jin, {G. Y.} and Oh, {K. S.} and D. Park and Song, {S. H.} and Jae-Sung Rieh and Hwang, {S. W.}",
year = "2011",
month = "9",
day = "1",
doi = "10.1109/LED.2011.2159473",
language = "English",
volume = "32",
pages = "1179--1181",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors

T2 - Effect of interface trap charge

AU - Hong, B. H.

AU - Cho, N.

AU - Lee, S. J.

AU - Yu, Y. S.

AU - Choi, L.

AU - Jung, Y. C.

AU - Cho, K. H.

AU - Yeo, K. H.

AU - Kim, D. W.

AU - Jin, G. Y.

AU - Oh, K. S.

AU - Park, D.

AU - Song, S. H.

AU - Rieh, Jae-Sung

AU - Hwang, S. W.

PY - 2011/9/1

Y1 - 2011/9/1

N2 - We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.

AB - We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.

KW - Gate-all-around (GAA)

KW - interface trap charge

KW - silicon nanowire field-effect transistor (SNWFET)

KW - subthreshold degradation

UR - http://www.scopus.com/inward/record.url?scp=80052037094&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052037094&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2159473

DO - 10.1109/LED.2011.2159473

M3 - Article

VL - 32

SP - 1179

EP - 1181

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 5944946

ER -