Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge

B. H. Hong; N. Cho; S. J. Lee; Y. S. Yu; L. Choi; Y. C. Jung; K. H. Cho; K. H. Yeo; D. W. Kim; G. Y. Jin; K. S. Oh; D. Park; S. H. Song; J. S. Rieh; S. W. Hwang

doi:10.1109/LED.2011.2159473

Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge

B. H. Hong, N. Cho, S. J. Lee, Y. S. Yu, L. Choi, Y. C. Jung, K. H. Cho, K. H. Yeo, D. W. Kim, G. Y. Jin, K. S. Oh, D. Park, S. H. Song, J. S. Rieh, S. W. Hwang

School of Electrical Engineering

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.

Original language	English
Article number	5944946
Pages (from-to)	1179-1181
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/LED.2011.2159473
Publication status	Published - 2011 Sep

Keywords

Gate-all-around (GAA)
interface trap charge
silicon nanowire field-effect transistor (SNWFET)
subthreshold degradation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2159473

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Hong, B. H., Cho, N., Lee, S. J., Yu, Y. S., Choi, L., Jung, Y. C., Cho, K. H., Yeo, K. H., Kim, D. W., Jin, G. Y., Oh, K. S., Park, D., Song, S. H., Rieh, J. S., & Hwang, S. W. (2011). Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge. IEEE Electron Device Letters, 32(9), 1179-1181. [5944946]. https://doi.org/10.1109/LED.2011.2159473

Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors : Effect of interface trap charge. / Hong, B. H.; Cho, N.; Lee, S. J.; Yu, Y. S.; Choi, L.; Jung, Y. C.; Cho, K. H.; Yeo, K. H.; Kim, D. W.; Jin, G. Y.; Oh, K. S.; Park, D.; Song, S. H.; Rieh, J. S.; Hwang, S. W.

In: IEEE Electron Device Letters, Vol. 32, No. 9, 5944946, 09.2011, p. 1179-1181.

Research output: Contribution to journal › Article

Hong, BH, Cho, N, Lee, SJ, Yu, YS, Choi, L, Jung, YC, Cho, KH, Yeo, KH, Kim, DW, Jin, GY, Oh, KS, Park, D, Song, SH, Rieh, JS & Hwang, SW 2011, 'Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge', IEEE Electron Device Letters, vol. 32, no. 9, 5944946, pp. 1179-1181. https://doi.org/10.1109/LED.2011.2159473

Hong, B. H. ; Cho, N. ; Lee, S. J. ; Yu, Y. S. ; Choi, L. ; Jung, Y. C. ; Cho, K. H. ; Yeo, K. H. ; Kim, D. W. ; Jin, G. Y. ; Oh, K. S. ; Park, D. ; Song, S. H. ; Rieh, J. S. ; Hwang, S. W. / Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors : Effect of interface trap charge. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 9. pp. 1179-1181.

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abstract = "We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.",

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