TY - JOUR
T1 - Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter
AU - Kim, Minsuk
AU - Jeon, Youngin
AU - Kim, Yoonjoong
AU - Kim, Sangsig
N1 - Funding Information:
This work was supported in part by the Mid-career Researcher Program ( NRF-2013R1A2A1A03070750 ) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology , and by the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor NWs). The TCAD software was provided by Silvaco.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/4/21
Y1 - 2015/4/21
N2 - In this study, we demonstrate the simulated subthreshold swing (SS) of silicon nanowire tunneling field-effect transistors (NWTFETs) by varying both the channel diameter from 10 nm to 40 nm and the gate coverage ratio from 30% to 100%. Our simulation work reveals that both a decrease in the channel diameter and an increase in the gate coverage ratio contribute to a reduction in the SS. Additionally, our work shows that the magnitude of the on-current depends linearly on the gate coverage ratio and that the drain current increases with a decrease in the channel diameter. Thus, an NWTFET with a channel diameter of 10 nm and a gate coverage ratio of 100% exhibits superior electrical characteristics over other silicon NWTFETs in that the NWTFET shows a point SS of 22.7 mV/dec, an average SS of 56.3 mV/dec, an on/off current ratio of ∼1013, and an on-current of ∼10-5 A/μm.
AB - In this study, we demonstrate the simulated subthreshold swing (SS) of silicon nanowire tunneling field-effect transistors (NWTFETs) by varying both the channel diameter from 10 nm to 40 nm and the gate coverage ratio from 30% to 100%. Our simulation work reveals that both a decrease in the channel diameter and an increase in the gate coverage ratio contribute to a reduction in the SS. Additionally, our work shows that the magnitude of the on-current depends linearly on the gate coverage ratio and that the drain current increases with a decrease in the channel diameter. Thus, an NWTFET with a channel diameter of 10 nm and a gate coverage ratio of 100% exhibits superior electrical characteristics over other silicon NWTFETs in that the NWTFET shows a point SS of 22.7 mV/dec, an average SS of 56.3 mV/dec, an on/off current ratio of ∼1013, and an on-current of ∼10-5 A/μm.
KW - Gate coverage
KW - Nanowire
KW - Sub-60 mV/dec
KW - Subthreshold swing (SS)
KW - Tunneling field effect transistor (TFET)
UR - http://www.scopus.com/inward/record.url?scp=84929484179&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2015.04.024
DO - 10.1016/j.cap.2015.04.024
M3 - Article
AN - SCOPUS:84929484179
SN - 1567-1739
VL - 15
SP - 780
EP - 783
JO - Current Applied Physics
JF - Current Applied Physics
IS - 7
ER -