Abstract
A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.
| Original language | English |
|---|---|
| Pages (from-to) | 439-441 |
| Number of pages | 3 |
| Journal | Journal of Materials Science Letters |
| Volume | 18 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1999 Jan 1 |
ASJC Scopus subject areas
- Materials Science(all)
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Kim, T. G., Kim, E. K., Min, S. K., & Park, J. H. (1999). Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array. Journal of Materials Science Letters, 18(6), 439-441. https://doi.org/10.1023/A:1006625927202