Abstract
A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.
| Original language | English |
|---|---|
| Pages (from-to) | 439-441 |
| Number of pages | 3 |
| Journal | Journal of Materials Science Letters |
| Volume | 18 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1999 Mar 1 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array. / Kim, Tae Geun; Kim, E. K.; Min, S. K.; Park, Jung ho.
In: Journal of Materials Science Letters, Vol. 18, No. 6, 01.03.1999, p. 439-441.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array
AU - Kim, Tae Geun
AU - Kim, E. K.
AU - Min, S. K.
AU - Park, Jung ho
PY - 1999/3/1
Y1 - 1999/3/1
N2 - A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.
AB - A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.
UR - http://www.scopus.com/inward/record.url?scp=0033100781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033100781&partnerID=8YFLogxK
U2 - 10.1023/A:1006625927202
DO - 10.1023/A:1006625927202
M3 - Article
AN - SCOPUS:0033100781
VL - 18
SP - 439
EP - 441
JO - Journal of Materials Science Letters
JF - Journal of Materials Science Letters
SN - 0261-8028
IS - 6
ER -