@article{f6d90691564446e884ce3299e757d491,
title = "Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array",
abstract = "A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.",
author = "Kim, {T. G.} and Kim, {E. K.} and Min, {S. K.} and Park, {J. H.}",
note = "Funding Information: This work was carried out in part with the support of the Korea Institute of Science and Technology (KIST). One of the authors (T.G.K) wishes to acknowledge the financial support of the Korea Research Foundation made in the program year 1997. T.G.K. is also grateful to Dr. Mutcho Ogura at the Electrotechnical Laboratory, Japan, for his encouragement. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",
year = "1999",
month = jan,
day = "1",
doi = "10.1023/A:1006625927202",
language = "English",
volume = "18",
pages = "439--441",
journal = "Journal of Materials Science Letters",
issn = "0261-8028",
publisher = "Chapman & Hall",
number = "6",
}