Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

Tae Geun Kim, E. K. Kim, S. K. Min, Jung ho Park

Research output: Contribution to journalArticle

Abstract

A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

Original languageEnglish
Pages (from-to)439-441
Number of pages3
JournalJournal of Materials Science Letters
Volume18
Issue number6
DOIs
Publication statusPublished - 1999 Mar 1

Fingerprint

Organic Chemicals
Organic chemicals
Chemical vapor deposition
Lasers
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

@article{f6d90691564446e884ce3299e757d491,
title = "Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array",
abstract = "A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.",
author = "Kim, {Tae Geun} and Kim, {E. K.} and Min, {S. K.} and Park, {Jung ho}",
year = "1999",
month = "3",
day = "1",
doi = "10.1023/A:1006625927202",
language = "English",
volume = "18",
pages = "439--441",
journal = "Journal of Materials Science Letters",
issn = "0261-8028",
publisher = "Chapman & Hall",
number = "6",

}

TY - JOUR

T1 - Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

AU - Kim, Tae Geun

AU - Kim, E. K.

AU - Min, S. K.

AU - Park, Jung ho

PY - 1999/3/1

Y1 - 1999/3/1

N2 - A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

AB - A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

UR - http://www.scopus.com/inward/record.url?scp=0033100781&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033100781&partnerID=8YFLogxK

U2 - 10.1023/A:1006625927202

DO - 10.1023/A:1006625927202

M3 - Article

VL - 18

SP - 439

EP - 441

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

SN - 0261-8028

IS - 6

ER -