Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

T. G. Kim; E. K. Kim; S. K. Min; J. H. Park

doi:10.1023/A:1006625927202

Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

T. G. Kim, E. K. Kim, S. K. Min, J. H. Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

Original language	English
Pages (from-to)	439-441
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	18
Issue number	6
DOIs	https://doi.org/10.1023/A:1006625927202
Publication status	Published - 1999 Jan 1

ASJC Scopus subject areas

Materials Science(all)

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abstract = "A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.",

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