Suicide mediated grown silicon thin films for photodiodes

Joondong Kim, Wayne A. Anderson, Chang Soo Han, Eung Sug Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quality Si thin films were grown by the metal-induced growth (MIG) method. Metal (Co, Ni, or mixing of Co and Ni) was thermally evaporated on a 200 nm-SiO2 coated Si wafer. Si sputtering was performed at 600-620°C in a dc magnetron system. The reaction of Si and metal first formed a suicide (CoSi2 or NiSi2) layer and further Si sputtering grew a Si film above it. The grown Si films were practically fabricated for Schottky photodiodes and electrically measured under one sun scan illumination (100 mW/cm ). The mixing of Co and Ni case improved the short circuit current density of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.

Original languageEnglish
Title of host publicationSolar Energy Conversion
Pages133-138
Number of pages6
Publication statusPublished - 2006
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume974
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kim, J., Anderson, W. A., Han, C. S., & Lee, E. S. (2006). Suicide mediated grown silicon thin films for photodiodes. In Solar Energy Conversion (pp. 133-138). (Materials Research Society Symposium Proceedings; Vol. 974).