60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers

Jiancheng Yang, Gregory J. Koller, Chaker Fares, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim, David J. Smith

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

β-Ga2O3 Schottky rectifiers consisting of thick (10 μm) epitaxial drift regions on conducting substrates are shown to have a high tolerance to 60Co gamma ray irradiation. This is due to the low carrier removal rate of <1 cm−1 for gamma rays, which contrasts to values of 300–500 cm−1 for MeV protons and alpha particles in the same rectifier structures. Changes in diode ideality factor, Schottky barrier height, on-resistance, on-off ratio, and reverse recovery time are all minimal for fluences up to 2 × 1016 cm2 (absorbed dose of 100 kGy (Si)). These results are consistent with previous reports on gamma-irradiation of Ga2O3 metal oxide semiconductor field effect transistors (MOSFETs) where changes were ascribed to damage in the gate dielectric and not to the Ga2O3 itself.

Original languageEnglish
Pages (from-to)Q3041-Q3045
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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