Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials

Adam J. Berro, Andrew J. Berglund, Peter T. Carmichael, Jong Seung Kim, J. Alexander Liddle

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.

Original languageEnglish
Pages (from-to)9496-9502
Number of pages7
JournalACS Nano
Volume6
Issue number11
DOIs
Publication statusPublished - 2012 Nov 27

Fingerprint

optical measurement
Microscopic examination
Lactams
Rhodamines
Protonation
Photoresists
microscopy
Coloring Agents
Dyes
Semiconductor materials
rhodamine
photoresists
ultraviolet radiation
Acids
dyes
industries
Industry
acids
Ultraviolet Rays

Keywords

  • chemically amplified resist
  • lithography
  • photoacid
  • single-molecule fluorescence
  • super-resolution microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials. / Berro, Adam J.; Berglund, Andrew J.; Carmichael, Peter T.; Kim, Jong Seung; Liddle, J. Alexander.

In: ACS Nano, Vol. 6, No. 11, 27.11.2012, p. 9496-9502.

Research output: Contribution to journalArticle

Berro, Adam J. ; Berglund, Andrew J. ; Carmichael, Peter T. ; Kim, Jong Seung ; Liddle, J. Alexander. / Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials. In: ACS Nano. 2012 ; Vol. 6, No. 11. pp. 9496-9502.
@article{7fa9c172ef384fce81680cf5a4b2543b,
title = "Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials",
abstract = "We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.",
keywords = "chemically amplified resist, lithography, photoacid, single-molecule fluorescence, super-resolution microscopy",
author = "Berro, {Adam J.} and Berglund, {Andrew J.} and Carmichael, {Peter T.} and Kim, {Jong Seung} and Liddle, {J. Alexander}",
year = "2012",
month = "11",
day = "27",
doi = "10.1021/nn304285m",
language = "English",
volume = "6",
pages = "9496--9502",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials

AU - Berro, Adam J.

AU - Berglund, Andrew J.

AU - Carmichael, Peter T.

AU - Kim, Jong Seung

AU - Liddle, J. Alexander

PY - 2012/11/27

Y1 - 2012/11/27

N2 - We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.

AB - We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.

KW - chemically amplified resist

KW - lithography

KW - photoacid

KW - single-molecule fluorescence

KW - super-resolution microscopy

UR - http://www.scopus.com/inward/record.url?scp=84870468400&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870468400&partnerID=8YFLogxK

U2 - 10.1021/nn304285m

DO - 10.1021/nn304285m

M3 - Article

VL - 6

SP - 9496

EP - 9502

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 11

ER -