Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Jaemin Shin, Eunah Ko, June Park, Seung Geun Kim, Jae Woo Lee, Hyun-Yong Yu, Changhwan Shin

Research output: Contribution to journalArticle

Abstract

A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).

Original languageEnglish
Article number102104
JournalApplied Physics Letters
Volume113
Issue number10
DOIs
Publication statusPublished - 2018 Sep 3

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fins
field effect transistors
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  • Physics and Astronomy (miscellaneous)

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Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device. / Shin, Jaemin; Ko, Eunah; Park, June; Kim, Seung Geun; Lee, Jae Woo; Yu, Hyun-Yong; Shin, Changhwan.

In: Applied Physics Letters, Vol. 113, No. 10, 102104, 03.09.2018.

Research output: Contribution to journalArticle

Shin, Jaemin ; Ko, Eunah ; Park, June ; Kim, Seung Geun ; Lee, Jae Woo ; Yu, Hyun-Yong ; Shin, Changhwan. / Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device. In: Applied Physics Letters. 2018 ; Vol. 113, No. 10.
@article{7918a9740fde4cb1874af1aa412869b4,
title = "Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device",
abstract = "A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).",
author = "Jaemin Shin and Eunah Ko and June Park and Kim, {Seung Geun} and Lee, {Jae Woo} and Hyun-Yong Yu and Changhwan Shin",
year = "2018",
month = "9",
day = "3",
doi = "10.1063/1.5030966",
language = "English",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

AU - Shin, Jaemin

AU - Ko, Eunah

AU - Park, June

AU - Kim, Seung Geun

AU - Lee, Jae Woo

AU - Yu, Hyun-Yong

AU - Shin, Changhwan

PY - 2018/9/3

Y1 - 2018/9/3

N2 - A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).

AB - A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).

UR - http://www.scopus.com/inward/record.url?scp=85053008481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053008481&partnerID=8YFLogxK

U2 - 10.1063/1.5030966

DO - 10.1063/1.5030966

M3 - Article

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102104

ER -