@article{7918a9740fde4cb1874af1aa412869b4,
title = "Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device",
abstract = "A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).",
author = "Jaemin Shin and Eunah Ko and June Park and Kim, {Seung Geun} and Lee, {Jae Woo} and Yu, {Hyun Yong} and Changhwan Shin",
note = "Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program (10067746) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium (KSRC). This work was also supported by the National Research Foundation of Korea (NRF) grant, funded by the Korea government (MSIP) (No. 2017R1A2A2A05069708). Furthermore, this was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF2015R1C1A1A01051864). Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = sep,
day = "3",
doi = "10.1063/1.5030966",
language = "English",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",
}