Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Jaemin Shin, Eunah Ko, June Park, Seung Geun Kim, Jae Woo Lee, Hyun Yong Yu, Changhwan Shin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).

Original languageEnglish
Article number102104
JournalApplied Physics Letters
Volume113
Issue number10
DOIs
Publication statusPublished - 2018 Sep 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> threshold switching device'. Together they form a unique fingerprint.

  • Cite this