Suppress of leakage current in polycrystalline CdZnTe X-ray detectors

K. H. Kim, Y. H. Na, Y. J. Park, T. R. Jung, S. U. Kim

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The polycrystalline CdZnTe thick films which has high resistivity about 5 × 109Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of ploycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Shottky barrier diodes exhibits low leakage current (14 nA/cm2) and high barrier height (φb = 0.798 eV).

Original languageEnglish
Pages (from-to)4515-4517
Number of pages3
JournalIEEE Nuclear Science Symposium Conference Record
Volume7
Publication statusPublished - 2004 Dec 1
Event2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy
Duration: 2004 Oct 162004 Oct 22

Keywords

  • CdZnTe
  • High resistivity
  • Indium
  • Leakage current
  • Polycrystalline
  • Schottky diode

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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