Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion

Min Sung Song, Byong Sun Chun, Young-geun Kim, Injun Hwang, Taewan Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta 42CoZrNb 9.2IrMn 15.5CoFe 3.3Al Ox 2freelayerAl Ox 2CoFe 7.5IrMn 15.5Ru 60 (nm). The freelayer includes CoFe 2.3CoZrNb 3.4CoFe 3. A CoFe 5 nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4 V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.

Original languageEnglish
Article number10C917
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

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tunnel junctions
insertion
retarding
electric potential
coercivity
interlayers
attenuation
products

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion. / Song, Min Sung; Chun, Byong Sun; Kim, Young-geun; Hwang, Injun; Kim, Taewan.

In: Journal of Applied Physics, Vol. 97, No. 10, 10C917, 15.05.2005.

Research output: Contribution to journalArticle

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