Suppression of leakage current via formation of a sidewall protector in the microgated carbon nanotube emitter

Yoon Taek Jang, Chang Hoon Choi, Byeong Kwon Ju, Jin H. Ahn, Yun-Hi Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this work, we have fabricated a triode field emitter using directly grown carbon nanotubes (CNTs) as an electron emission source. Vertically aligned CNTs have been grown in the centre of the gate hole, to the size of 1.5 μm in diameter, using thermal chemical vapour deposition. A comparison of the field emission characteristics of two types of microgated nanotube emitter with and without a sidewall protector for the gate hole is made. A sidewall protector formed by the method of tilting the substrate can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without a sidewall protector at a gate voltage of 100 V.

Original languageEnglish
Pages (from-to)497-500
Number of pages4
JournalNanotechnology
Volume14
Issue number5
DOIs
Publication statusPublished - 2003 May 1

Fingerprint

protectors
Carbon Nanotubes
Leakage currents
Carbon nanotubes
emitters
leakage
carbon nanotubes
retarding
Nanotubes
Triodes
Electron emission
Short circuit currents
Field emission
triodes
Chemical vapor deposition
short circuits
Hot Temperature
Electrons
electron emission
field emission

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Suppression of leakage current via formation of a sidewall protector in the microgated carbon nanotube emitter. / Jang, Yoon Taek; Choi, Chang Hoon; Ju, Byeong Kwon; Ahn, Jin H.; Lee, Yun-Hi.

In: Nanotechnology, Vol. 14, No. 5, 01.05.2003, p. 497-500.

Research output: Contribution to journalArticle

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