Suppression of leakage currents in AlGaN/GaN HEMTs by optimizing the thermal ramping rate during the Ohmic RTP process

Ho Jun Nam, Hong Goo Choi, Min Woo Ha, Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Cheol Koo Hahn, Jung ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)


In this research, we investigated the effects of ramp rates in the rapid thermal annealing process (RTP) on the drain and the gate leakage currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates. Varying the ramp rates during the Ohmic alloy process affect leakage currents by one or two orders of magnitude. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) analyses show that the AlGaN surfaces (composition, surface states, morphology) are modified due to thermal stress during RTP, which is one of the prime origins of the leakage currents in the devices.

Original languageEnglish
Pages (from-to)439-442
Number of pages4
JournalJournal of the Korean Physical Society
Issue number21
Publication statusPublished - 2011 Aug 12


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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