Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

Jae Hyun Park, Tae sig Chang, Minsuk Kim, Sola Woo, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, we investigate threshold voltage (V TH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced V TH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (V TH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.

Original languageEnglish
JournalSuperlattices and Microstructures
DOIs
Publication statusAccepted/In press - 2017 Sep 19

Fingerprint

Threshold voltage
Ion implantation
threshold voltage
ion implantation
field effect transistors
adjusting
Doping (additives)
retarding
MOSFET devices
Availability
Fabrication
metal oxide semiconductors
availability
implantation
costs
Costs
dosage
fabrication
simulation
energy

Keywords

  • Impedance field method
  • Ion implantation
  • MOSFET
  • Random dopant fluctuation
  • Sense amplifier
  • Threshold voltage variability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters. / Park, Jae Hyun; Chang, Tae sig; Kim, Minsuk; Woo, Sola; Kim, Sangsig.

In: Superlattices and Microstructures, 19.09.2017.

Research output: Contribution to journalArticle

@article{ff272c5eac9f4b07b76f7d647d43cfec,
title = "Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters",
abstract = "In this study, we investigate threshold voltage (V TH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced V TH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (V TH) is reduced from 43.8 mV to 28.9 mV. This 34{\%} reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.",
keywords = "Impedance field method, Ion implantation, MOSFET, Random dopant fluctuation, Sense amplifier, Threshold voltage variability",
author = "Park, {Jae Hyun} and Chang, {Tae sig} and Minsuk Kim and Sola Woo and Sangsig Kim",
year = "2017",
month = "9",
day = "19",
doi = "10.1016/j.spmi.2017.10.034",
language = "English",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

AU - Park, Jae Hyun

AU - Chang, Tae sig

AU - Kim, Minsuk

AU - Woo, Sola

AU - Kim, Sangsig

PY - 2017/9/19

Y1 - 2017/9/19

N2 - In this study, we investigate threshold voltage (V TH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced V TH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (V TH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.

AB - In this study, we investigate threshold voltage (V TH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced V TH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (V TH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.

KW - Impedance field method

KW - Ion implantation

KW - MOSFET

KW - Random dopant fluctuation

KW - Sense amplifier

KW - Threshold voltage variability

UR - http://www.scopus.com/inward/record.url?scp=85033389457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85033389457&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2017.10.034

DO - 10.1016/j.spmi.2017.10.034

M3 - Article

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -