Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

Jae Hyun Park, Tae sig Chang, Minsuk Kim, Sola Woo, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, we investigate threshold voltage (V TH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced V TH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (V TH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.

Original languageEnglish
JournalSuperlattices and Microstructures
DOIs
Publication statusAccepted/In press - 2017 Sep 19

Keywords

  • Impedance field method
  • Ion implantation
  • MOSFET
  • Random dopant fluctuation
  • Sense amplifier
  • Threshold voltage variability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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