TY - JOUR
T1 - Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters
AU - Park, Jae Hyun
AU - Chang, Tae sig
AU - Kim, Minsuk
AU - Woo, Sola
AU - Kim, Sangsig
N1 - Funding Information:
This work was partly supported by SK Hynix and the Brain Korea 21 Plus Project in 2017. This material is based upon work supported by the Ministry of Trade, Industry and Energy under Industrial Strategic Technology Development Program. ( 10067791 , ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’).
Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2018/1
Y1 - 2018/1
N2 - In this study, we investigate threshold voltage (VTH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced VTH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (VTH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.
AB - In this study, we investigate threshold voltage (VTH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced VTH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (VTH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.
KW - Impedance field method
KW - Ion implantation
KW - MOSFET
KW - Random dopant fluctuation
KW - Sense amplifier
KW - Threshold voltage variability
UR - http://www.scopus.com/inward/record.url?scp=85033389457&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2017.10.034
DO - 10.1016/j.spmi.2017.10.034
M3 - Article
AN - SCOPUS:85033389457
SN - 0749-6036
VL - 113
SP - 169
EP - 177
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -