Surface analysis of plasma pretreated sapphire substrate for aluminum nitride buffer layer

Woo Seop Jeong, Dae Sik Kim, Seung Hee Cho, Chul Kim, Junggeun Jhin, Dong Jin Byun

Research output: Contribution to journalArticle

Abstract

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after N2 plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, N2 plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with N2 plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from Al2O3 to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface N2 plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

Original languageEnglish
Pages (from-to)699-704
Number of pages6
JournalKorean Journal of Materials Research
Volume27
Issue number12
DOIs
Publication statusPublished - 2017 Dec 1

Fingerprint

Aluminum nitride
Aluminum Oxide
Surface analysis
Buffer layers
Gallium nitride
Sapphire
Plasmas
Substrates
Photoelectron spectroscopy
Epitaxial growth
Organic Chemicals
X rays
Organic chemicals
High resolution transmission electron microscopy
Binding energy
Magnetron sputtering
Light emitting diodes
Chemical vapor deposition
Metals
aluminum nitride

Keywords

  • AlN
  • Buffer
  • GaN
  • Pretreatment
  • PSS

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Surface analysis of plasma pretreated sapphire substrate for aluminum nitride buffer layer. / Jeong, Woo Seop; Kim, Dae Sik; Cho, Seung Hee; Kim, Chul; Jhin, Junggeun; Byun, Dong Jin.

In: Korean Journal of Materials Research, Vol. 27, No. 12, 01.12.2017, p. 699-704.

Research output: Contribution to journalArticle

Jeong, Woo Seop ; Kim, Dae Sik ; Cho, Seung Hee ; Kim, Chul ; Jhin, Junggeun ; Byun, Dong Jin. / Surface analysis of plasma pretreated sapphire substrate for aluminum nitride buffer layer. In: Korean Journal of Materials Research. 2017 ; Vol. 27, No. 12. pp. 699-704.
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