Surface application of chromium silicide for improved stability of field emitter arrays

In Jae Chung, A. Hariz, M. R. Haskard, Byeong Kwon Ju, M. H. Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper investigates the merits of chromium silicide coating of microtips. The chromium coated silicon microtips were prepared by the silicidation process. The current-voltage characteristics, current fluctuation and surface morphologies of each sample were measured and analyzed. It was found that the application of chromium silicide to silicon field emitters decreases the current fluctuation range to about 50% that of a pure silicon emitter and shows high discharge resistance. Furthermore, it increases the emission current and reduces the onset voltage of tunnelling. The reason for this stabilization can be explained by the reduced number of chemically active sites resulting in a silicide-protected and chemically-stable layer, and higher electrical conductivity of the material.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Pages245-249
Number of pages5
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

chromium
emitters
silicon
electric potential
stabilization
coatings
electrical resistivity

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Chung, I. J., Hariz, A., Haskard, M. R., Ju, B. K., & Oh, M. H. (1996). Surface application of chromium silicide for improved stability of field emitter arrays. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 245-249)

Surface application of chromium silicide for improved stability of field emitter arrays. / Chung, In Jae; Hariz, A.; Haskard, M. R.; Ju, Byeong Kwon; Oh, M. H.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. 1996. p. 245-249.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chung, IJ, Hariz, A, Haskard, MR, Ju, BK & Oh, MH 1996, Surface application of chromium silicide for improved stability of field emitter arrays. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. pp. 245-249, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Chung IJ, Hariz A, Haskard MR, Ju BK, Oh MH. Surface application of chromium silicide for improved stability of field emitter arrays. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. 1996. p. 245-249
Chung, In Jae ; Hariz, A. ; Haskard, M. R. ; Ju, Byeong Kwon ; Oh, M. H. / Surface application of chromium silicide for improved stability of field emitter arrays. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. 1996. pp. 245-249
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