Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

Young Ran Park, Min Jae Ko, Yoon Ho Song, Cheol Jin Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.

Original languageEnglish
Article number153516
JournalJournal of Applied Physics
Volume114
Issue number15
DOIs
Publication statusPublished - 2013 Oct 21

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carbon nanotubes
electronic structure
nitrogen
vacuum
binding energy
annealing
photoelectron spectroscopy
ultraviolet spectroscopy
conduction bands
optical properties
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks. / Park, Young Ran; Ko, Min Jae; Song, Yoon Ho; Lee, Cheol Jin.

In: Journal of Applied Physics, Vol. 114, No. 15, 153516, 21.10.2013.

Research output: Contribution to journalArticle

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