Abstract
Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)2S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)2S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.
| Original language | English |
|---|---|
| Pages (from-to) | 203-205 |
| Number of pages | 3 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 591 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Jun 11 |
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Keywords
- CdS
- CdZnTe
- Passivation
- Surface
- XPS
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material. / Cho, Shin Hang; Suh, Jong Hee; Won, Jae Ho; Kim, Kihyun; Hong, Jin Ki; Kim, Sun Ung.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 591, No. 1, 11.06.2008, p. 203-205.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material
AU - Cho, Shin Hang
AU - Suh, Jong Hee
AU - Won, Jae Ho
AU - Kim, Kihyun
AU - Hong, Jin Ki
AU - Kim, Sun Ung
PY - 2008/6/11
Y1 - 2008/6/11
N2 - Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)2S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)2S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.
AB - Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)2S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)2S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.
KW - CdS
KW - CdZnTe
KW - Passivation
KW - Surface
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=44649113631&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44649113631&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2008.03.059
DO - 10.1016/j.nima.2008.03.059
M3 - Article
VL - 591
SP - 203
EP - 205
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
SN - 0168-9002
IS - 1
ER -