Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material

Shin Hang Cho; Jong Hee Suh; Jae Ho Won; Ki Hyun Kim; Jin Ki Hong; Sun Ung Kim

doi:10.1016/j.nima.2008.03.059

Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material

Shin Hang Cho, Jong Hee Suh, Jae Ho Won, Ki Hyun Kim, Jin Ki Hong, Sun Ung Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO₂ or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH₄)₂S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH₄)₂S. XPS data showed that (NH₄)₂S passivation removed conductive TeO₂ layers and induced formation of insulating CdTeO₃ and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.

Original language	English
Pages (from-to)	203-205
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	591
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2008.03.059
Publication status	Published - 2008 Jun 11

Keywords

CdS
CdZnTe
Passivation
Surface
XPS

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2008.03.059

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Cho, S. H., Suh, J. H., Won, J. H., Kim, K. H., Hong, J. K., & Kim, S. U. (2008). Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 591(1), 203-205. https://doi.org/10.1016/j.nima.2008.03.059

Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material. / Cho, Shin Hang; Suh, Jong Hee; Won, Jae Ho et al.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 591, No. 1, 11.06.2008, p. 203-205.

Research output: Contribution to journal › Article › peer-review

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title = "Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material",

abstract = "Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)2S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)2S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.",

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author = "Cho, {Shin Hang} and Suh, {Jong Hee} and Won, {Jae Ho} and Kim, {Ki Hyun} and Hong, {Jin Ki} and Kim, {Sun Ung}",

note = "Funding Information: This work has supported partially by the second Brain Korea 21 Program endorsed by the Korea Ministry of Education.",

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AU - Cho, Shin Hang

AU - Suh, Jong Hee

AU - Won, Jae Ho

AU - Kim, Ki Hyun

AU - Hong, Jin Ki

AU - Kim, Sun Ung

N1 - Funding Information: This work has supported partially by the second Brain Korea 21 Program endorsed by the Korea Ministry of Education.

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N2 - Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)2S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)2S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.

AB - Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)2S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)2S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed.

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Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material

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