Surface modification of α-Al2O3(0001) by N2+ ion irradiation

Won Kook Choi; Sung Chang Choi; Hyung Jin Jung; Seok Keun Koh; Dong Jin Byun; Dong Wha Kum

doi:10.1116/1.581539

Surface modification of α-Al₂O₃(0001) by N₂⁺ ion irradiation

Won Kook Choi, Sung Chang Choi, Hyung Jin Jung, Seok Keun Koh, Dong Jin Byun, Dong Wha Kum

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N₂⁺ ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher than 500 eV was observed. From the N 1s x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N₂⁺ ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV.

Original language	English
Pages (from-to)	3311-3313
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	16
Issue number	6
DOIs	https://doi.org/10.1116/1.581539
Publication status	Published - 1998

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Surface modification of α-Al2O3(0001) by N2+ ion irradiation",

abstract = "The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N2+ ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher than 500 eV was observed. From the N 1s x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N2+ ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV.",

author = "Choi, {Won Kook} and Choi, {Sung Chang} and Jung, {Hyung Jin} and Koh, {Seok Keun} and Byun, {Dong Jin} and Kum, {Dong Wha}",

year = "1998",

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language = "English",

volume = "16",

pages = "3311--3313",

journal = "Journal of Vacuum Science and Technology A",

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TY - JOUR

T1 - Surface modification of α-Al2O3(0001) by N2+ ion irradiation

AU - Choi, Won Kook

AU - Choi, Sung Chang

AU - Jung, Hyung Jin

AU - Koh, Seok Keun

AU - Byun, Dong Jin

AU - Kum, Dong Wha

PY - 1998

Y1 - 1998

N2 - The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N2+ ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher than 500 eV was observed. From the N 1s x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N2+ ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV.

AB - The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N2+ ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher than 500 eV was observed. From the N 1s x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N2+ ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV.

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DO - 10.1116/1.581539

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SN - 0734-2101

VL - 16

SP - 3311

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 6

ER -

Surface modification of α-Al₂O₃(0001) by N₂⁺ ion irradiation

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