The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N2+ ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher than 500 eV was observed. From the N 1s x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N2+ ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films