Surface modification of high haze front transparent conductive oxide for silicon thin film solar cell

Sun Ho Kim; Dong Joo You; Jin Hee Park; Sung Eun Lee; Heon Min Lee; Donghwan Kim

doi:10.1143/JJAP.51.10NB12

Surface modification of high haze front transparent conductive oxide for silicon thin film solar cell

Sun Ho Kim, Dong Joo You, Jin Hee Park, Sung Eun Lee, Heon Min Lee, Donghwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The aluminium-doped zinc oxide (ZnO:Al) films grown by sputtering method were etched to improve the light scattering property. The high haze value (diffuse transmission to total transmission) of above 40% at 850nm wavelength was obtained by the increase of etching time. But the resistance of film increased and a lot of pin holes were created due to the over etch for high haze. In order to solve these problems, the additional ZnO layer was deposited on etched ZnO:Al film without sacrifice of high haze. This method was able to compensate the deteriorated properties without the change of optical properties. Amorphous based silicon solar cells showed the improvement of photovoltaic performances by the additional deposition.

Original language	English
Article number	10NB12
Journal	Japanese journal of applied physics
Volume	51
Issue number	10 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.10NB12
Publication status	Published - 2012 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1143/JJAP.51.10NB12

Cite this

@article{0d590b5e43b04c289ad7268062e6ae2a,

title = "Surface modification of high haze front transparent conductive oxide for silicon thin film solar cell",

abstract = "The aluminium-doped zinc oxide (ZnO:Al) films grown by sputtering method were etched to improve the light scattering property. The high haze value (diffuse transmission to total transmission) of above 40% at 850nm wavelength was obtained by the increase of etching time. But the resistance of film increased and a lot of pin holes were created due to the over etch for high haze. In order to solve these problems, the additional ZnO layer was deposited on etched ZnO:Al film without sacrifice of high haze. This method was able to compensate the deteriorated properties without the change of optical properties. Amorphous based silicon solar cells showed the improvement of photovoltaic performances by the additional deposition.",

author = "Kim, {Sun Ho} and You, {Dong Joo} and Park, {Jin Hee} and Lee, {Sung Eun} and Lee, {Heon Min} and Donghwan Kim",

year = "2012",

month = oct,

doi = "10.1143/JJAP.51.10NB12",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10 PART 2",

}

TY - JOUR

T1 - Surface modification of high haze front transparent conductive oxide for silicon thin film solar cell

AU - Kim, Sun Ho

AU - You, Dong Joo

AU - Park, Jin Hee

AU - Lee, Sung Eun

AU - Lee, Heon Min

AU - Kim, Donghwan

PY - 2012/10

Y1 - 2012/10

N2 - The aluminium-doped zinc oxide (ZnO:Al) films grown by sputtering method were etched to improve the light scattering property. The high haze value (diffuse transmission to total transmission) of above 40% at 850nm wavelength was obtained by the increase of etching time. But the resistance of film increased and a lot of pin holes were created due to the over etch for high haze. In order to solve these problems, the additional ZnO layer was deposited on etched ZnO:Al film without sacrifice of high haze. This method was able to compensate the deteriorated properties without the change of optical properties. Amorphous based silicon solar cells showed the improvement of photovoltaic performances by the additional deposition.

AB - The aluminium-doped zinc oxide (ZnO:Al) films grown by sputtering method were etched to improve the light scattering property. The high haze value (diffuse transmission to total transmission) of above 40% at 850nm wavelength was obtained by the increase of etching time. But the resistance of film increased and a lot of pin holes were created due to the over etch for high haze. In order to solve these problems, the additional ZnO layer was deposited on etched ZnO:Al film without sacrifice of high haze. This method was able to compensate the deteriorated properties without the change of optical properties. Amorphous based silicon solar cells showed the improvement of photovoltaic performances by the additional deposition.

UR - http://www.scopus.com/inward/record.url?scp=84869111702&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.10NB12

DO - 10.1143/JJAP.51.10NB12

M3 - Article

AN - SCOPUS:84869111702

SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 10 PART 2

M1 - 10NB12

ER -

Surface modification of high haze front transparent conductive oxide for silicon thin film solar cell

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this