Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Seong Ju Park, Jeong Rae Ro, Jeong Sook Ha, Sung Bock Kim, Hyo Hoon Park, El Hang Lee, Jae Yel Yi, Joeng Yong Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Temperature-dependent evolution of surface corrugation and the interface dislocation in In0.15Ga0.85As epilayer on GaAs(100) substrate grown by chemical beam epitaxy using unprecracked monoethylarsine have been investigated by atomic force microscope (AFM) and transmission electron microscopy (TEM). AFM images showed that the line direction of surface ridge changes from [011] to [01̄1] with increasing temperature. However, TEM micrographs showed that dislocation networks are formed along both [011] and [01̄1] directions at the interface. These results indicate that growth kinetics on the terrace and at surface steps generated by the dislocations play an important role in determining the direction of surface corrugation. We suggest that the temperature-dependent change of surface corrugation is caused by an anisotropic surface diffusion on the terrace and different sticking probability of adsorbates on the surface steps which were produced by interface misfit dislocation along the two orthogonal surface directions.

Original languageEnglish
Pages (from-to)221-228
Number of pages8
JournalSurface Science
Volume350
Issue number1-3
Publication statusPublished - 1996 Apr 20
Externally publishedYes

Fingerprint

Chemical beam epitaxy
epitaxy
Surface morphology
Microscopes
microscopes
Transmission electron microscopy
transmission electron microscopy
Surface diffusion
Epilayers
Growth kinetics
Adsorbates
surface diffusion
gallium arsenide
Dislocations (crystals)
Temperature
temperature
ridges
Direction compound
kinetics
Substrates

Keywords

  • Atomic force microscopy
  • Chemical beam epitaxy
  • InGaAs
  • Semiconductor-semiconductor heterostructures
  • Surface structure

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium. / Park, Seong Ju; Ro, Jeong Rae; Ha, Jeong Sook; Kim, Sung Bock; Park, Hyo Hoon; Lee, El Hang; Yi, Jae Yel; Lee, Joeng Yong.

In: Surface Science, Vol. 350, No. 1-3, 20.04.1996, p. 221-228.

Research output: Contribution to journalArticle

Park, Seong Ju ; Ro, Jeong Rae ; Ha, Jeong Sook ; Kim, Sung Bock ; Park, Hyo Hoon ; Lee, El Hang ; Yi, Jae Yel ; Lee, Joeng Yong. / Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium. In: Surface Science. 1996 ; Vol. 350, No. 1-3. pp. 221-228.
@article{7ccb133e800b4d779ffb48ef236ccf1a,
title = "Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium",
abstract = "Temperature-dependent evolution of surface corrugation and the interface dislocation in In0.15Ga0.85As epilayer on GaAs(100) substrate grown by chemical beam epitaxy using unprecracked monoethylarsine have been investigated by atomic force microscope (AFM) and transmission electron microscopy (TEM). AFM images showed that the line direction of surface ridge changes from [011] to [01̄1] with increasing temperature. However, TEM micrographs showed that dislocation networks are formed along both [011] and [01̄1] directions at the interface. These results indicate that growth kinetics on the terrace and at surface steps generated by the dislocations play an important role in determining the direction of surface corrugation. We suggest that the temperature-dependent change of surface corrugation is caused by an anisotropic surface diffusion on the terrace and different sticking probability of adsorbates on the surface steps which were produced by interface misfit dislocation along the two orthogonal surface directions.",
keywords = "Atomic force microscopy, Chemical beam epitaxy, InGaAs, Semiconductor-semiconductor heterostructures, Surface structure",
author = "Park, {Seong Ju} and Ro, {Jeong Rae} and Ha, {Jeong Sook} and Kim, {Sung Bock} and Park, {Hyo Hoon} and Lee, {El Hang} and Yi, {Jae Yel} and Lee, {Joeng Yong}",
year = "1996",
month = "4",
day = "20",
language = "English",
volume = "350",
pages = "221--228",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

AU - Park, Seong Ju

AU - Ro, Jeong Rae

AU - Ha, Jeong Sook

AU - Kim, Sung Bock

AU - Park, Hyo Hoon

AU - Lee, El Hang

AU - Yi, Jae Yel

AU - Lee, Joeng Yong

PY - 1996/4/20

Y1 - 1996/4/20

N2 - Temperature-dependent evolution of surface corrugation and the interface dislocation in In0.15Ga0.85As epilayer on GaAs(100) substrate grown by chemical beam epitaxy using unprecracked monoethylarsine have been investigated by atomic force microscope (AFM) and transmission electron microscopy (TEM). AFM images showed that the line direction of surface ridge changes from [011] to [01̄1] with increasing temperature. However, TEM micrographs showed that dislocation networks are formed along both [011] and [01̄1] directions at the interface. These results indicate that growth kinetics on the terrace and at surface steps generated by the dislocations play an important role in determining the direction of surface corrugation. We suggest that the temperature-dependent change of surface corrugation is caused by an anisotropic surface diffusion on the terrace and different sticking probability of adsorbates on the surface steps which were produced by interface misfit dislocation along the two orthogonal surface directions.

AB - Temperature-dependent evolution of surface corrugation and the interface dislocation in In0.15Ga0.85As epilayer on GaAs(100) substrate grown by chemical beam epitaxy using unprecracked monoethylarsine have been investigated by atomic force microscope (AFM) and transmission electron microscopy (TEM). AFM images showed that the line direction of surface ridge changes from [011] to [01̄1] with increasing temperature. However, TEM micrographs showed that dislocation networks are formed along both [011] and [01̄1] directions at the interface. These results indicate that growth kinetics on the terrace and at surface steps generated by the dislocations play an important role in determining the direction of surface corrugation. We suggest that the temperature-dependent change of surface corrugation is caused by an anisotropic surface diffusion on the terrace and different sticking probability of adsorbates on the surface steps which were produced by interface misfit dislocation along the two orthogonal surface directions.

KW - Atomic force microscopy

KW - Chemical beam epitaxy

KW - InGaAs

KW - Semiconductor-semiconductor heterostructures

KW - Surface structure

UR - http://www.scopus.com/inward/record.url?scp=0030127958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030127958&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030127958

VL - 350

SP - 221

EP - 228

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -