Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Seong Ju Park, Jeong Rae Ro, Jeong Sook Ha, Sung Bock Kim, Hyo Hoon Park, El Hang Lee, Jae Yel Yi, Joeng Yong Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Temperature-dependent evolution of surface corrugation and the interface dislocation in In0.15Ga0.85As epilayer on GaAs(100) substrate grown by chemical beam epitaxy using unprecracked monoethylarsine have been investigated by atomic force microscope (AFM) and transmission electron microscopy (TEM). AFM images showed that the line direction of surface ridge changes from [011] to [01̄1] with increasing temperature. However, TEM micrographs showed that dislocation networks are formed along both [011] and [01̄1] directions at the interface. These results indicate that growth kinetics on the terrace and at surface steps generated by the dislocations play an important role in determining the direction of surface corrugation. We suggest that the temperature-dependent change of surface corrugation is caused by an anisotropic surface diffusion on the terrace and different sticking probability of adsorbates on the surface steps which were produced by interface misfit dislocation along the two orthogonal surface directions.

Original languageEnglish
Pages (from-to)221-228
Number of pages8
JournalSurface Science
Volume350
Issue number1-3
DOIs
Publication statusPublished - 1996 Apr 20
Externally publishedYes

Keywords

  • Atomic force microscopy
  • Chemical beam epitaxy
  • InGaAs
  • Semiconductor-semiconductor heterostructures
  • Surface structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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