Surface morphology of (NH42sx-treated gaas(100) investigated by scanning tunneling microscopy

Jeong Sook Ha, Sung Bock Kim, Seong Ju Park, El Hang Lee

Research output: Contribution to journalArticle

Abstract

The surface morphology of n-GaAs(100) after etching with sulfuric acid and sulfur passivation with ammonium sulfide ((NH4)2sx) solution were systematically investigated using a scanning tunneling microscope (STM) under ambient conditions. Depending on the etching and passivation conditions, the surface roughness was observed to vary widely. The effects of water rinse, HC1 treatment, and passivation time on the surface morphology were studied through etching and passivation reactions. In particular, a very flat surface with a sub-nanometer surface undulation was obtained.after sulfur passivation for 20 min without postetch water rinse. These studies enabled a better understanding of the effects of the routinely used etching and passivation reactions on the surface morphology of GaAs(100) in nanometer scale and showed that GaAs can be used as a substrate for nanofabrication.

Original languageEnglish
Pages (from-to)1123-1126
Number of pages4
JournalJapanese journal of applied physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995 Feb
Externally publishedYes

Keywords

  • (NH)s-GaAs(100)
  • STM
  • Surface morphology

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Surface morphology of (NH<sub>4</sub><sub>2</sub>s<sub>x</sub>-treated gaas(100) investigated by scanning tunneling microscopy'. Together they form a unique fingerprint.

Cite this