Surface morphology of (NH4)2Sx-treated GaAs(100) investigated by scanning tunneling microscopy

Jeong Sook Ha, Sung Bock Kim, Seong Ju Park, El Hang Lee

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The surface morphology of n-GaAs(100) after etching with sulfuric acid and sulfur passivation with ammonium sulfide ((NH4)2Sx) solution were systematically investigated using a scanning tunneling microscope (STM) under ambient conditions. Depending on the etching and passivation conditions, the surface roughness was observed to vary widely. The effects of water rinse, HCl treatment, and passivation time on the surface morphology were studied through etching and passivation reactions. In particular, a very flat surface with a sub-nanometer surface undulation was obtained after sulfur passivation for 20 min without postetch water rinse. These studies enabled a better understanding of the effects of the routinely used etching and passivation reactions on the surface morphology of GaAs(100) in nanometer scale and showed that GaAs can be used as a substrate for nanofabrication.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsSeigo Tarucha, Yasuhiko Arakawa, Masao Fukuma, Kazuhito Furuya, Yoshiji Horikoshi, al et al
Place of PublicationMinato-ku, Japan
PublisherJJAP
Pages1123-1126
Number of pages4
Volume34
Edition2 B
Publication statusPublished - 1995 Feb 1
Externally publishedYes
EventProceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) - Yokohama, Jpn
Duration: 1994 Aug 231994 Aug 26

Other

OtherProceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94)
CityYokohama, Jpn
Period94/8/2394/8/26

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ha, J. S., Kim, S. B., Park, S. J., & Lee, E. H. (1995). Surface morphology of (NH4)2Sx-treated GaAs(100) investigated by scanning tunneling microscopy. In S. Tarucha, Y. Arakawa, M. Fukuma, K. Furuya, Y. Horikoshi, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (2 B ed., Vol. 34, pp. 1123-1126). Minato-ku, Japan: JJAP.