Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Gwang Sik Kim, Seung Hwan Kim, Jeong Kyu Kim, Changhwan Shin, Jin Hong Park, Krishna C. Saraswat, Byung Jin Cho, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF6 plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (ρc) of 1.14 × 10-3~Ω. cm2 and 0.31 eV of Schottky barrier height is achieved for a Ti/SF6-treated n-type Ge (n-Ge) ( Nd= 1 × 1017 cm-3) contact, exhibiting 1700 times ρc reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.

Original languageEnglish
Article number7116476
Pages (from-to)745-747
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 2015 Aug 1


  • Fermi-level unpinning
  • SF6 plasma
  • contact resistance
  • germanium
  • surface passivation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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