Surface passivation properties of boron and phosphor-doped A-Si: H films with multi-step deposition for Si heterojunction solar cells

Kwang Sun Ji, Junghoon Choi, Won Seok Choi, Heon Min Lee, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Heterojunction, such as the crystalline silicon(c-Si)/hydrogenated amorphous silicon (a-Si:H), forms a high quality passivation properties and developed for a very low recombination contact for photovoltaic devices. As low as doppant concentration (like un-doped or intrinsic), the defect density is decreased and its passivation properties is enhanced, however, in case of emitter or BSF, the low doppant concentration can cause higher contact resistance with TCO or metal electrode simultaneously, so the doping concentration limited by this reason. In this work, we studied the method avoiding doppant concentration limitation in p and n type a-Si:H films with multi layer deposition. The doped p and n type a-Si:H films were divided as two layers, passivation and contacting, through in-situ multistep deposition with different doppant flow rate. The passivation properties of multistep deposited p type a-Si:H films revealed that there were no degradation of lifetime(teff) and implied Voc as increasing doppant concentration, differ from n type case, and showed enhanced open circuit voltage and quantum efficiency at short wavelength.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages3190-3192
Number of pages3
DOIs
Publication statusPublished - 2010 Dec 20
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 2010 Jun 202010 Jun 25

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period10/6/2010/6/25

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Ji, K. S., Choi, J., Choi, W. S., Lee, H. M., & Kim, D. (2010). Surface passivation properties of boron and phosphor-doped A-Si: H films with multi-step deposition for Si heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3190-3192). [5616848] https://doi.org/10.1109/PVSC.2010.5616848